Porous semiconductors have garnered significant attention for their novel chemistry and potential applications as high surface area and optically active substrates [ 1-5 ]. Porous silicon in particular has long been studied for its potential applications in optoelectronics and sensing as a result of its light-emitting properties [ 6-10 ]. In addition, they can also serve as drug or gene delivery matrix because of their good biocompatibility [11][12] . Porous silicon is typically synthesized by applying a voltage bias to a silicon substrate immersed in an aqueous or ethanoic hydrofluoric acid (HF) solution. Surface and charge instabilities at the solid-solution interface are thought to nucleate pore formation, and accelerated etching of silicon at the pore tips propagates the voids into the substrate. The resulting pore networks and remaining silicon scaffold form the structure of porous silicon [ 13,14 ]. The synthetic method described in this study, on the other hand, relies on an electroless metal deposition process to provide the current flux necessary for porous silicon formation. Electroless metal deposition and subsequent sacrificial etching of the surrounding silicon lattice has been previously observed [ 15 ] and exploited to controllably etch arrays of silicon nanowires [ 16 ]. We have now found that it is possible to etch arrays of single-crystalline mesoporous silicon nanowires without the application of an external voltage.