2005
DOI: 10.1002/smll.200500137
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Aligned Single‐Crystalline Si Nanowire Arrays for Photovoltaic Applications

Abstract: Silicon nanowires (SiNWs) with desirable axial crystallographic orientations can be readily prepared by a novel chemical‐etching technique (see SEM image). The as‐synthesized SiNW arrays significantly suppress reflection over the visible‐light spectral range and are therefore promising candidates for antireflection coatings of photovoltaic cells despite exhibiting a lower efficiency than non‐nanowire‐based devices at this stage of development.

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Cited by 825 publications
(658 citation statements)
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“…This feature is different from those of all the Si NWAs synthesized by other methods before in which little interconnections exist. [1][2][3][4]14 It can be deduced that these connections provide the structure strength of the arrays so that the as-synthesized Si NWAs could be freestanding. Spotty rings are shown in the SAED pattern of a part of one nanowire (inset of Fig.…”
mentioning
confidence: 99%
“…This feature is different from those of all the Si NWAs synthesized by other methods before in which little interconnections exist. [1][2][3][4]14 It can be deduced that these connections provide the structure strength of the arrays so that the as-synthesized Si NWAs could be freestanding. Spotty rings are shown in the SAED pattern of a part of one nanowire (inset of Fig.…”
mentioning
confidence: 99%
“…͓doi:10.1063/1.3567527͔ To achieve a high energy conversion efficiency, a solar cell must be thick enough for sufficient light absorption, yet it must be thin enough for efficient carrier collection. [1][2][3] Recently, the applications of nanocoax, 1 nanocone, 4,5 nanodome, 6 nanopillar, 7,8 nanorod, 2,3,9-13 and nanowire [14][15][16][17][18][19][20][21][22][23][24] structures for solar cells have attracted great interest. Compared to the conventional planar thin film counterparts, the nanostructured devices demonstrate the benefits of enhancing charge collection and improving light absorption simultaneously, due to their unique geometry.…”
mentioning
confidence: 99%
“…All ligands were obtained commercially, with the exception of ligand 3, which was prepared according to literature [21]. Electroless etched SiNWs were prepared following a reported method [22]. A p-type Si (100) substrate (Wafternet, 10 15 cm 3 , B-doped; 10-20 Ω cm) was cleaned with acetone, methanol, and isopropanol sequentially and then oxidized in H 2 O 2 /H 2 SO 4 1:3 at 90°C for 10 min to remove heavy metals and organic species.…”
Section: Methodsmentioning
confidence: 99%