A novel flame-retardant and toughened bio-based poly(lactic acid) (PLA)/glycidyl methacrylate-grafted natural rubber (GNR) composite was fabricated by sequentially dynamical vulcanizing and reactive melt-blending. The surface modification of aluminum hypophosphite (AHP) enhanced the interfacial compatibility between the modified aluminum hypophosphite by silane (SiAHP) and PLA/GNR matrix and the charring ability of the PLA/GNR/SiAHP composites to a certain extent, and the toughness and flame retardancy of the PLA/GNR/SiAHP composites were slightly higher than those of PLA/GNR/AHP composites, respectively. The notched impact strength and elongation of the PLA composite with 20 wt. %GNR and 18 wt.% SiAHP were 13.1 kJ/m2 and 72%, approximately 385% and 17 fold higher than those of PLA, respectively, and its limiting oxygen index increased to 26.5% and a UL-94 V-0 rating was achieved. Notedly, the very serious melt-dripping characteristics of PLA during combustion was completely suppressed. The peak heat release rate and total heat release values of the PLA/GNR/SiAHP composites dramatically reduced, and the char yield obviously increased with an increasing SiAHP content in the cone calorimeter test. The good flame retardancy of the PLA/GNR/SiAHP composites was suggested to be the result of a synergistic effect involving gaseous and condensed phase flame-retardant mechanisms. The high-performance flame-retardant PLA/GNR/SiAHP composites have great potential application as replacements for petroleum-based polymers in the automotive interior and building fields.
Amorphous Gallium oxide (Ga2O3) thin films were grown by plasma-enhanced atomic layer deposition using O2 plasma as reactant and trimethylgallium as a gallium source. The growth rate of the Ga2O3 films was about 0.6 Å/cycle and was acquired at a temperature ranging from 80 to 250 °C. The investigation of transmittance and the adsorption edge of Ga2O3 films prepared on sapphire substrates showed that the band gap energy gradually decreases from 5.04 to 4.76 eV with the increasing temperature. X-ray photoelectron spectroscopy (XPS) analysis indicated that all the Ga2O3 thin films showed a good stoichiometric ratio, and the atomic ratio of Ga/O was close to 0.7. According to XPS analysis, the proportion of Ga3+ and lattice oxygen increases with the increase in temperature resulting in denser films. By analyzing the film density from X-ray reflectivity and by a refractive index curve, it was found that the higher temperature, the denser the film. Atomic force microscopic analysis showed that the surface roughness values increased from 0.091 to 0.187 nm with the increasing substrate temperature. X-ray diffraction and transmission electron microscopy investigation showed that Ga2O3 films grown at temperatures from 80 to 200 °C were amorphous, and the Ga2O3 film grown at 250 °C was slightly crystalline with some nanocrystalline structures.
A series of different contents of glycidyl methacrylate (GMA)-grafted natural rubber (GNR) copolymers were fabricated via green bulk melt-grafting reactions, and super-tough bio-based poly (lactic acid) (PLA)/GNR thermoplastic vulcanizates (TPVs) were achieved by in-situ dynamic vulcanization. Increasing the graft yield, gel fraction, and crosslinking density of GNR vulcanizates effectively improved the ductility of the PLA/GNR TPVs, while prolonging the dynamic vulcanization time and increasing the GMA graft yield led to a notable enhancement in the impact toughness of the PLA/GNR TPVs. PLA/30 wt % GNR TPVs exhibited a significantly increased elongation (410%) and notched impact strength (73.2 kJ/m2), which were 40 and 15 times higher than those of the PLA/30 wt % NR TPVs, respectively. The new bio-based PLA/GNR TPVs offer promise as replacements for petroleum-based polymers in the automotive, 3D printing, and packaging fields.
In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO2 thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO2 films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO2 thin films was also investigated. As the annealing temperature increases, the SiO2 thin film becomes denser, leading to a higher refractive index and a lower etch rate.
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