Demonstration of an SiC neutron detector for high-radiation environments

Seshadri, S. R.; Dulloo, A.R.; Ruddy, F.H.; Seidel, John G.; Rowland, L.B.

doi:10.1109/16.748878

Cited by 123 publications

(61 citation statements)

References 7 publications

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“…This can be attributed to their higher leakage current. The pulse height spectra, given by D2 diodes implanted or not by 10 B, are shown in Fig. 11.…”

Section: Neutron Irradiation Testsmentioning

confidence: 99%

“…Both types of detectors have been implanted by 10 B directly into the Al metallic contact in order to create the NCL. The D1-diodes were implanted by 10 B at 2 MeV and a dose of 5× 10 15 cm −2 at 400 • C into the thick Al contact layer for thermal neutron detection.…”

Section: -P2mentioning

confidence: 99%

“…As an alternative to the conventional semiconductors, wide band gap semiconductors, such as silicon carbide (SiC) devices, have been developed for alpha particle [4][5][6] or x-ray detectors [7][8][9], and as radiation detectors in harsh environments [10,11]. This development is motivated by the wide band gap, high radiation resistance and high thermal conductivity of the SiC material.…”

Section: Introductionmentioning

confidence: 99%

“…Specifically, thermal neutrons with energy of 0.025 eV interact with 10 B resulting in production of alpha particles and lithium ions, which are released in opposite directions according to the following two reactions having different probabilities: 10 B + n → 7 Li + 4 He (Q = 2.72 MeV) 6% 10 B + n → 7 Li* + 4 He (Q = 2.31 MeV) 94%.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore mechanisms for detecting thermal neutrons are based on indirect methods where thermal neutrons interact with specific isotopes, such as 10 B and 6 Li, to react and produce charged particles. Moreover, the microscopic thermal neutron absorption cross-section of 10 B is 3840 barns, leading to higher reaction probability than for 6 Li (940 barns) [21].…”

Section: Introductionmentioning

confidence: 99%

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Improvements in Realizing 4H-SiC Thermal Neutron Detectors

Issa

Vervisch

Ottaviani

et al. 2016

EPJ Web of Conferences

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Abstract. In this work we presented two types of 4H-SiC semiconductor detectors (D1 and D2) both based on ion implantation of 10 B inside the aluminum metallic contact. The first detector shows a high leakage current after the implantation and low signal to noise ratio. However, improvements concerning the implantation parameters and the distance between the implanted 10 B thermal neutron converter layer and the active pn-junction have led to low leakage current and thus to higher signal to noise ratio. This proves the strength of this new method of realizing sensitive SiC-based thermal neutron detectors.

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“…This can be attributed to their higher leakage current. The pulse height spectra, given by D2 diodes implanted or not by 10 B, are shown in Fig. 11.…”

Section: Neutron Irradiation Testsmentioning

confidence: 99%

Section: -P2mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Improvements in Realizing 4H-SiC Thermal Neutron Detectors

Issa

Vervisch

Ottaviani

et al. 2016

EPJ Web of Conferences

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Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Muhammad

Wang

Zhang

et al. 2022

Adv Materials Technologies

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These energetic particles, such as electrons, protons, neutrons, X-rays, or gamma rays, induced damage in materials (used in electronic devices) through total ionization and displacement, [4] which would affect the reliability of the electronic devices. [5][6][7] Electronics failure occurs in harsh and inaccessible environments through various paths, such as electromagnetic waves, nuclear reactions, and high-frequency communications systems. Therefore, the radiationhardened requirements of the deployed electronic technology depend on the specific high-energy photons and particles in the radiation environment. For example, Mars exploration requires a special proton anti-radiation in electronics. At the same time, the safety supervision and inspection of the contaminated nuclear area are suggested to be equipped with high resilience towards the alpha, beta, and gamma rays. The development of radiation-hard electric circuits over the years has led researchers to consider the application of functional anti-irradiation material to devices. The current focus is on developing complementary metal-oxide semiconductors (CMOS) with wide bandgap semiconductors (WBGs), which are well suited to large-area aerospace applications. [8][9][10] As shown in Figure 1, a notable material class of WBGs can be listed as metal oxides (MOS), transition-metal dichalcogenides (TMDs), silicon carbide, gallium nitride, and others. WBGs materials contribute robust properties under harsh conditions due to their strong electronic compliance, high-temperature competence, and strong atomic bond energy. [11][12][13][14][15][16] They have been proposed as favorable materials for aerospace and other radiation-hardened applications. Generally, the bandgap in the semiconductor reflects the extra energy that a valence electron must access to become a free electron. Its large bandgap of more than 3 eV guarantees inherent reliability in the semiconductors, providing transparency for the low-energy photons. The large, spherical nsorbitals in the conduction band (CB) of MOS also play a critical role in high dopability for hosting a high density of electrons, leading to the remarkably tolerance to various radiation fluences. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] Understanding the apparent immunity of the WBGs to various radiation environments and radiation-hard electronic engineering would be critical for pushing the technology further and understanding its limitations. Efforts to address these issues have been underway over the past two decades. Substantial progress has also been made in designing radiation-hard thin films transistors (TFTs) with ZnO, Ga 2 O 3 , In 2 O 3 , SnO 2 , IGZO, SiC, GaN, and many other WBGs, The aspiration of electronic technologies that are resistant to high-energy cosmic radiation is essential for current harsh radiation environment exploration. Integrated circuits mostly require post-processing after designing, making their structures more complex than the standard systems. Thus, unique de...

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Radiation Detection Using n-Type 4H-SiC Epitaxial Layer Surface Barrier Detectors

Chaudhuri

Mandal

2021

Advanced Materials for Radiation Detection

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Demonstration of an SiC neutron detector for high-radiation environments

Cited by 123 publications

References 7 publications

Improvements in Realizing 4H-SiC Thermal Neutron Detectors

Improvements in Realizing 4H-SiC Thermal Neutron Detectors

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Radiation Detection Using n-Type 4H-SiC Epitaxial Layer Surface Barrier Detectors

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