Radiation Detection Using n-Type 4H-SiC Epitaxial Layer Surface Barrier Detectors

Chaudhuri, Sandeep K.; Mandal, Krishna C.

doi:10.1007/978-3-030-76461-6_9

Cited by 13 publications

(6 citation statements)

References 67 publications

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“…The key factors to maintain during the growth are the carbon-to-silicon ratio which is necessary to control the formation of native point defects such as carbon/silicon vacancy/interstitials and other defect complexes, such as carbon antisite vacancy (CAV) pairs, as well as the growth rate which determines the uniformity of the crystalline nature of the epilayers. While impurity type defects such as titanium are mostly shallow levels, intrinsic deep level trap centers such as carbon vacancies pose serious threats as charges trapped in deep levels are prone to recombination leading to loss of signal and degradation of detector performance [4]. Apart from point defects, extended structural defects such as threading screw dislocations (TSD), threading edge dislocations (TED), and basal plane dislocations (BPD) also affect the crystallinity of the epilayers [19].…”

Section: Sic Epilayer Growth and Device Fabricationmentioning

confidence: 99%

“…Lower bandgap causes high leakage currents even at room temperature and lower displacement threshold implies formation of a higher number of radiation-induced defects at lower energies. The 4H polytype of silicon carbide is a wide bandgap (3.27 eV at 300K) semiconductor that is extremely radiation hard due to the high displacement threshold of Si and C in the 4H-SiC lattice [4]. The thermal conductivity of 4H-SiC is also very high and its physical properties barely change with increased temperature.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments

Mandal

Chaudhuri

Ruddy³

2023

EPJ Web Conf.

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Reactor dosimetry environments require radiation detectors that are capable of operating at high temperatures in extremely high neutron and gamma-ray dose rates. Silicon carbide (SiC) is one of the most promising wide bandgap semiconductors (3.27 eV) for harsh environment applications due to its radiation hardness, high breakdown voltage, high electron saturation velocity, and high thermal conductivity. In this paper, we summarize the prospect of Schottky barrier radiation detectors, fabricated on highly crystalline low-defect detector-grade n-type 4H-SiC epitaxial layers with thickness ranging from 20 to 250 lm, for harsh environment applications. A comprehensive discussion on the characterization of the parameters that influence the energy resolution has been included. The usage of electrical and radiation spectroscopic measurements for characterizing the junction and rectification properties, minority carrier diffusion lengths, and energy resolution has been elaborated. Characterization of crucial factors that limit the energy resolution of the detectors such as charge trap centers using thermally stimulated transient techniques is summarized. Finally, the effect of neutron fluence on the performance of the 4H-SiC detectors is discussed.

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Section: Sic Epilayer Growth and Device Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments

Mandal

Chaudhuri

Ruddy³

2023

EPJ Web Conf.

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“…Neutron detectors based on Silicon Carbide (SiC) have many advantages for neutron dosimetry and monitoring applications [1]. Following the first demonstration of radiation detectors based on 4H-SiC epitaxial layers [2], rapid progress and refinement of SiC detectors have been achieved [3][4][5][6][7]. SiC neutron detectors are particularly useful for measurements in the high-temperature, high-radiation environments typically encountered in nuclear power applications [8].…”

Section: Introductionmentioning

confidence: 99%

Design Considerations for Boron-Diffused and Implanted 4H-SiC Epitaxial Neutron Detectors for Dosimetry and Monitoring Applications

Ruddy¹,

Kleppinger

Mandal

2023

EPJ Web Conf.

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Thermal-neutron detectors based on 4H-SiC semiconductor and 10B converter reactions have many advantages for neutron dosimetry and monitoring applications. These radiation-resistant detectors are capable of stable operation in elevated-temperature environments up to 700 °C for extended periods. The recent development of SiC detectors where the 10B is incorporated into the detector by ion implantation or diffusion leads to interesting application-specific design possibilities. The design of boron-diffused detectors is discussed as well as ways to optimize their design.

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“…[2] Focusing on photon energy resolution, high-sensitivity criteria in addition to the easiness of its use, the HPGe still provides one of the best results, despite the need for cryogenic operation. On the other hand, RT detection is still a major problem as the other known candidate materials exhibit a higher defect concentration [3] and/or are not easy to grow into large crystals unlike the case of HPGe crystals. In future, development of cryogenic cooling fridges for HPGe detectors will eliminate the currently used liquid nitrogen (LN 2 ) cryogenic installations.…”

Section: Introductionmentioning

confidence: 99%

Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices

Sumathi

Gybin

Gradwohl

et al. 2023

Cryst. Res. Technol.

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High‐purity germanium (HPGe) single crystals find their applications as radiation detectors especially for spectroscopy of high‐energy photons and particles in nuclear physics. Growing “detector‐grade” HPGe single crystals, with tailored structural defects and controlled impurity content, uniform throughout the crystal is a challenging task in this type of crystalline semiconductor material. All different process steps for HPGe, namely, i) reducing germanium dioxide powder into Ge metal; ii) zone refining of intrinsic source material (6 N) up to an ultrahigh purity (13 N); iii) Czochralski growth of high‐purity single crystals, are developed in house. A specific preparatory coating process for zone refining is entrenched as part of this work. Gallium, a dominant impurity usually found in HPGe, can be avoided. Using these advanced process know‐hows, a technology to grow volume Ge single crystals of large diameter (3 in.) with very high purity (net carrier concentration ≈ 5 × 1010 cm−3 or equivalent to 1 part per trillion level) is successfully developed. The zone‐refined Ge bars and the crystals show p‐type conductivity. Some crystals exhibit n‐type conductivity, and n–p or p–n transition is encountered in a single growth experiment. Besides the first results of encompassing very high‐purity crystals with uniform diameter, a controlled dislocation density (≈104 cm−2) can be realized.

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Radiation Detection Using n-Type 4H-SiC Epitaxial Layer Surface Barrier Detectors

Cited by 13 publications

References 67 publications

Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments

Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments

Design Considerations for Boron-Diffused and Implanted 4H-SiC Epitaxial Neutron Detectors for Dosimetry and Monitoring Applications

Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices

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