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The radiation detection properties of semiconductor detectors made of 4H silicon carbide were evaluated. Both Schottky and p-n junction devices were tested. Exposure to alpha particles from a 238Pu source led to robust signals from the detectors. The resolution of the Schottky S i c detector was 5.8% (FWHM) at an energy of 294 keV, while that of the p-n junction was 6.6% (EWHM) at 260 keV.No effect of temperature in the range of 22 to 89 "C was observed on the characteristics of the Pu alpha-induced signal from the S i c detector. In addition, testing in a gamma field of 10,000 rad-Si h" showed that the alpha-induced signal was separable from the gamma signal. 238

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