De-bondable SiC SiC wafer bonding via an intermediate Ni nano-film

Mu, Fengwen; Uomoto, Miyuki; Shimatsu, T.; Wang, Yinghui; Iguchi, Kenichi; Nakazawa, Hiroyuki; Takahashi, Yoshikazu; Higurashi, Eiji; Suga, Tadatomo

doi:10.1016/j.apsusc.2018.09.050

Cited by 14 publications

(9 citation statements)

References 29 publications

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“…Nanoscale metallic thin films are widely used in optical coatings and electronics industry. − The large volume fractions of atoms associated with surfaces and interfaces in such metallic nanolayers generally result in a metastable state, characterized by an enhanced atomic mobility at low temperatures, which typically compromises their long-term integrity and performance under harsh operating conditions. Hence, as-deposited metallic thin films, particularly metallic nanolayers, are prone to degradation at low temperatures. , The intrinsic metastable state of metallic nanolayers on chemically inert substrates can also be exploited to transform the layered structure into a nanostructured network or an arrangement of isolated islands upon heating, as driven by minimization of the system’s energy .…”

Section: Introductionmentioning

confidence: 99%

Local Deformation-Controlled Fast Directional Metal Outflow in Metal/Ceramic Nanolayer Sandwiches upon Low Temperature Annealing

Lin

Jeurgens

2019

ACS Appl. Mater. Interfaces

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Precise nanoindentation on AlN/Cu/AlN nanolayer sandwiches has been conducted by using an atomic force microscope to promote fast and directional metal (Cu) outflow upon heating at low temperatures. Local plastic deformation during indentation results in the generation of high defect densities and stress gradients, which not only effectively reduce the activation energies for fast in-plane diffusion but also direct the in-plane transport of confined Cu to the indent location. In addition, a steep chemical potential gradient of O will be established across the AlN barrier upon exposure to air, which drives fast outward diffusion of Cu along defective pathways in the top AlN layer at the indent location. Selective and fast Cu metal outflow can thus be achieved at the indent locations upon annealing at a relatively low temperature of 350 °C for 5 min in air. The microstructures and phase boundaries of the AlN barrier and confined Cu nanolayers are unperturbed outside the plastically deformed region and remain metastable after annealing at 350 °C. By changing the surface processing modes, patterned nanoparticles and isolated nanowire structures can be fabricated straightforwardly. Such local deformation-controlled directional mass transport phenomena can be utilized to manipulate materials down to the atomic scale for designing functional nanoarchitectures for nanophotonic and nanoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Local Deformation-Controlled Fast Directional Metal Outflow in Metal/Ceramic Nanolayer Sandwiches upon Low Temperature Annealing

Lin

Jeurgens

2019

ACS Appl. Mater. Interfaces

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“…One of the most effective methods is to use the heat dissipation substrates to remove the heat in time. SiC is used for heat dissipation substrates for GaN due to its high thermal conductivity and small lattice mismatch with GaN [ 13 , 105 , 106 , 107 , 108 , 109 ]. Unfortunately, the existence of the thermal boundary conductance (TBC) between GaN and SiC limits heat transport, making significant errors in theoretical calculations and experiments [ 110 , 111 ].…”

Section: Heterogeneous Bonding For Wide-bandgap Semiconductors Thin-film Transfer Onto Sic or Diamond Substrates For High Heat Dissipatiomentioning

confidence: 99%

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

Ren

et al. 2021

Micromachines

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Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart CutTM process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.

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“…The main applications of SiC-based power devices are in the fields of smart grids, transportation, new energy vehicles, photovoltaics, and wind power. [64] The new energy vehicle is the growth driver of the SiC-based power device market. Currently, the commonly used SiC-based devices in new energy vehicles are power control units (PCU), inverters, DC-DC converters, and on-board chargers.…”

Section: Direct Bonding Of the Wide-bandgap Semiconductors Towards Himentioning

confidence: 99%

Progress in wafer bonding technology towards MEMS, high-power electronics, optoelectronics, and optofluidics

Tian

et al. 2020

International Journal of Optomechatronics

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De-bondable SiC SiC wafer bonding via an intermediate Ni nano-film

Cited by 14 publications

References 29 publications

Local Deformation-Controlled Fast Directional Metal Outflow in Metal/Ceramic Nanolayer Sandwiches upon Low Temperature Annealing

Local Deformation-Controlled Fast Directional Metal Outflow in Metal/Ceramic Nanolayer Sandwiches upon Low Temperature Annealing

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

Progress in wafer bonding technology towards MEMS, high-power electronics, optoelectronics, and optofluidics

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