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We fabricated high-output-power 255 and 280 nm light-emitting diodes (LEDs) using direct bonding. The LED chips were bonded to sapphire lenses at room temperature using either atomic diffusion bonding or surface-activated bonding. The LEDs with lenses had a higher light extraction efficiency than conventionally structured LEDs. As a result, at a forward current of 350 mA, the output power of the 255 nm LED increased by a factor of 2.8, reaching 73.6 mW, while that of the 280 nm LED increased by a factor of 2.3, reaching 153 mW.

Effect of 3 d , 4 d , and 5 d transition metal doping on damping in permalloy thin filmsBonding between two flat wafers with thin metal films was studied for 14 thin metal films with various crystal structures and self-diffusion coefficients. Thin nanocrystalline metal films were fabricated on two flat wafers' surfaces using sputter deposition. Bonding of the two metal films on the wafers was accomplished immediately after film deposition in vacuum. For the films, Al, Au, Ag, Cu, Si, Co, Ni, Pt, Ti, Ru, Fe, Cr, Mo, and Ta were used. The wafers were bonded at room temperature over the entire bonded area ͑1 or 2 in. wafers of either Si or SiO 2 ͒ using these metal films. Transmission electron microscopic cross-section images revealed that complete crystalline grains were formed across the original surfaces of the films, probably because of recrystallization occurring at the bonded interface when Al-Al, Ag-Ag, Au-Au, Cu-Cu, and Ti-Ti nanocrystalline films were bonded. A clear interface corresponding closely to the original film surface was visible in the bonded Pt-Pt films. However, fcc-͑111͒ lattices were formed continuously across the films' original surfaces. A thin amorphous layer was formed at the interfaces of Cr-Cr, Fe-Fe, and Ta-Ta bonded films. Experimental results revealed that the two films' bonded structure was related closely to the self-diffusion coefficients of the metals used for bonding. A high atomic diffusion coefficient at the grain boundaries and film surfaces is likely to have enabled bonding at room temperature. Moreover, results obtained using Cu-Cu, Al-Al, Ti-Ti, Cr-Cr, and Ta-Ta films demonstrated that the wafers were bonded even with only 0.2-nm-thick films on both sides. Bonding films of different materials was also achieved, e.g., Ta-Cu films. The bonding technique described herein is promising for use with bonding wafers to fabricate new thin film devices and microelectromechanical systems.

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We have studied the switching behavior of a single Co/Pt multilayer dot under the assistance of rf fields. The switching field monotonically decreases with increasing rf frequency up to a critical frequency. It is found that the reduction of the switching field is more significant than the theoretical prediction based on the single macrospin model. In addition, switching field distribution due to thermal fluctuation is also considerably suppressed. The simulation has revealed that these drastic changes are caused by excitation of large amplitude spin waves in the dot.

L 1 1 type Co-Pt ordered alloy films with a large uniaxial magnetic anisotropy, Ku, of the order of 107erg∕cm3 were successfully fabricated at relatively low substrate temperatures of 270–390°C using ultrahigh vacuum sputter film deposition. L11 type ordered Co-Pt films, with the ⟨111⟩ direction (easy axis of magnetization) perpendicular to the film plane, were fabricated on MgO(111) single crystal substrates and glass disks. The ordered structure was formed in a wide Pt content region of 40–75at.%, and Ku showed a maximum at around 50at.% Pt content. The values of the order parameter S and Ku for L11 type Co50Pt50 films increased as the substrate temperature Ts, increased. Ku reached about 3.7×107erg∕cm3 (S=0.54) at Ts=360°C for the single crystal films deposited on MgO(111) substrates, indicating a potential increase in Ku by enhancing the ordering. The values of Ku for polycrystalline films deposited on glass disks were smaller than those for the single crystal films on MgO(111) substrates, however, Ku reached 1.9×107erg∕cm3 at Ts=360°C. The experimental results demonstrate the potential of L11 type Co50Pt50 films for use in data storage applications, because of their very high Ku, comparable to L10 type Fe50Pt50 films, the relatively low fabrication temperature, and good controllability of the grain orientation.

Magnetic dot arrays with perpendicular magnetic anisotropy were fabricated by patterning Co(80)Pt(20)-alloy continuous films by means of laser interference lithography. As commonly seen in large dot arrays, there is a large difference in the switching field between dots. Here we investigate the origin of this large switching field distribution, by using the anomalous Hall effect (AHE). The high sensitivity of the AHE permits us to measure the magnetic reversal of individual dots in an array of 80 dots with a diameter of 180 nm. By taking 1000 hysteresis loops we reveal the thermally induced switching field distribution SFD(T) of individual dots inside the array. The SFD(T) of the first and last switching dots were fitted to an Arrhenius model, and a clear difference in switching volume and magnetic anisotropy was observed between dots switching at low and high fields.