It has been established that dihalodiphosphinenickel(II) complexes exhibit extremely high catalytic activity for selective cross-coupling of Grignard reagents with aryl and alkenyl halides. This catalytic reaction can be employed in synthetic practice for reasons of simple procedures, mild reaction conditions, high yields and high purity of the coupling products, and the wide applicability to reactions involving primary and secondary alkyl (regardless of the presence or absence of β-hydrogen (s)), aryl, and alkenyl Grignard reagents and nonfused, fused, and substituted aromatic halides and haloolefins. Limitations lie in sluggish reactions between alkyl Grignard reagents and dihaloethylenes. The most effective catalysts are [Ni{(C6H5)2P(CH2)3P(C6H5)2}Cl2] for alkyl and simple aryl Grignard reagents, [Ni{(CH3)2P(CH2)2P(CH3)2}Cl2] for alkenyl and allylic Grignard reagents and [Ni{P(C6H5)3}2-Cl2] for sterically hindered aryl Grignard reagents and halides. Great stabilizing effects of phosphine ligands on the catalytic species are demonstrated by no effect observed after aging the catalyst. Organic chlorides are generally the most suitable halide in view of the reasonable reactivities and limited side reactions. Ether is favored over tetrahydrofuran as solvent. About sixty experimental results are presented and several features are discussed.

We fabricated high-output-power 280-nm light-emitting diodes (LEDs) by employing high-crystal-quality AlN templates and optimized epitaxial structures. The emission wavelength, output power, forward voltage, spectral linewidth, and external quantum efficiency of the fabricated device measured at 20 mA were 281.0 nm, 2.45 mW, 7.53 V, 10.6 nm, and 2.78%, respectively. In the case of DC operation, the output power increased with time probably resulting from enhanced p-type activation by junction heating. We also fabricated a multi-chip device which consisted of 26 small-chip LEDs. It produced 223 mW at a pulse injection current of 1850 mA.

Al x Ga 1−x N layers with 0.05⩽x⩽0.25 were studied using spectrally and time resolved cathodoluminescence (CL). Continuous wave spectra were taken at temperatures ranging from 5 to 300 K. The near-band-edge peak emission energy exhibits an s-shaped temperature dependence characteristic of disordered systems. This effect is quantitatively explained within a model of potential fluctuations caused by alloy disorder. An s-shape temperature dependence has been observed in other alloy systems including InGaN, however, no systematic study exists for AlGaN. In this work, the s-shape temperature dependence is systematically analyzed as a function of aluminum content and quantitatively correlated with a model of alloy disorder. The shift in the luminescence peak position with respect to the usual temperature dependence of the band gap has been quantified by −σE2/kBT, where σE is the standard deviation of the potential fluctuations. Its dependence on aluminum concentration, x, was found to systematically increase from 7 meV at x=0.05 to 21 meV at x=0.25, following the theory for alloy disorder. The recombination and relaxation kinetics investigated using time-resolved CL are fully consistent with our potential fluctuation model. At 5 K, when the excitons are strongly localized, the exciton lifetime increases monotonically with aluminum content. At elevated temperatures, when the excitons are delocalized, the decay is significantly faster and preferentially nonradiative, regardless of the aluminum content.

We fabricated high-output-power 255 and 280 nm light-emitting diodes (LEDs) using direct bonding. The LED chips were bonded to sapphire lenses at room temperature using either atomic diffusion bonding or surface-activated bonding. The LEDs with lenses had a higher light extraction efficiency than conventionally structured LEDs. As a result, at a forward current of 350 mA, the output power of the 255 nm LED increased by a factor of 2.8, reaching 73.6 mW, while that of the 280 nm LED increased by a factor of 2.3, reaching 153 mW.

255/280/310 nm deep ultraviolet light-emitting diodes (DUV LEDs) suitable for high-current operation are reported. Newly developed 1 mm sized chips are installed in a commercial package with a two-series configuration. At a forward current of 350 mA, we measured powers of 45.2, 93.3, and 65.8 mW for the 255, 280, and 310 nm LEDs, respectively. The corresponding external quantum efficiencies per serial circuit were 1.3, 3.0, and 2.4%, and successful chip scalability was demonstrated. The 50% lifetime of the 280 nm LED die was estimated to be 3000 h at a junction temperature of 30 • C.

These results suggest that inflammatory mediators such as IL-1 beta or TNF-alpha secreted by dermal neutrophils may be involved in overexpression of elafin in keratinocytes; this could protect the epidermis from degradation by dermal neutrophil infiltration.

Angioleiomyoma (ALM) is a rare benign, vascular smooth muscle tumor originating from the tunica media of the vessel wall. It typically arises in the cutaneous, subcutaneous tissue of the lower extremities in middle-aged women and is less than 2 cm in diameter. We report an ALM of the thigh in a 69-year-old woman with intermittent pain. US was performed with a high-resolution, broad-band (5 MHz-18 MHz) linear transducer for the superficial nodule. To the best of our knowledge, there has been no report of high-resolution ultrasound image features, including grayscale US, color Doppler US and Real-Time Tissue Elastography (RTE) for an ALM. ALM should be considered as one of the painful and vascularized subcutaneous mass, a superficial location that can be seen on high-resolution US. The feature of adjacent blood flow signal on color Doppler US could be strongly suggested to be ALM.

We have studied structural changes that occur during annealing of GaInNAs/GaAs multiple quantum wells grown by metalorganic vapor-phase epitaxy (MOVPE). Different thermal treatments led to an improved room-temperature photoluminescence (PL) intensity, but also to room-temperature PL peak splitting. This splitting is related to the appearance of compositional clustering as displayed by transmission electron microscopy (TEM). In addition to this, interfacial layers on each side of the wells have also been observed by TEM and their composition is discussed on the basis of high resolution x-ray diffraction studies. It is suggested that the interface layers are indium deficient, but enriched in nitrogen, degrading the optical quantum well performance and indicating a need for improved switching sequences in the MOVPE growth.