Control of Orientation for Polycrystalline Silicon Thin Films Fabricated from Fluorinated Source Gas by Microwave Plasma Enhanced Chemical Vapor Deposition

Abstract

It is shown that a density of states (DOS) proportional to the excitation energy, a so-called polar-like DOS, can arise in odd-parity states, with the superconducting gap vanishing at points even though the spin-orbit interaction for Cooper pairing is strong. Such gap structures are realized in the nonunitary states, F 1u (1, i, 0), F 1u (1, ε, ε 2 ), and F 2u (1, i, 0), classified by Volovik and Gorkov (1985 Sov. Phys.-JETP 61 843). This is due to the gap vanishing in a quadratic manner around a point on the Fermi surface.

Correlations between structural properties and performance of microcrystalline silicon solar cells fabricated by conventional RF-PECVD

“…It is not clear what role is played by the preferential crystalline orientation of the film. While it has been shown that preferential growth strongly depends on plasma conditions, and the competition between selective etching and growth has been proposed as the growth kinetics of favorable crystal directions [13][14][15], detailed and precise mechanism remains elusive.…”

Crystallization of silicon films by rapid joule heating method

“…Many technologies have been reported for the formation of polycrystalline silicon films at low processing temperature [1][2][3][4][5][6][7][8][9][10]. Lateral crystalline grain growth is very important for the formation of large crystalline grain in thin films.…”

Crystalline Grain Growth in the Lateral Direction for Silicon Thin Films by Electrical Current-Induced Joule Heating

“…Many technologies have been reported for the formation of polycrystalline silicon films at low processing temperatures. [1][2][3][4][5][6][7][8][9][10] Rapid thermal crystallization methods such as, for example, the laser crystallization or photocurrent assisted crystallization methods, have been recently applied to the formation of high-quality polycrystalline silicon films with a large grain size. [11][12][13][14] We have also reported a crystallization method involving electricalcurrent-induced joule heating of silicon films in order to fabricate large crystalline grains in the lateral direction.…”