Hole drift mobilities have been measured using photocarrier time-of-l-light for several hydrogenated amorphous silicon-carbon alloy specimens. We find that, as the band gap increases, the hole drift mobility remains essentially constant. The temperature and dispersion properties were broadly consistent with hole multiple trapping in the valence bandtail. In conjunction with previous drift mobility measurements in hydrogenated amorphous silicon-carbon alloys and hydrogenated amorphous silicon-germanium alloys, these hole measurements complete a simple pattern for the effects of band gap modification on drift mobilities: electron mobilities decline as the band gap is increased or decreased from 1.75 eV, but hole mobilities are relatively unaffected.
By applying hybrid functions of general block-pulse functions and the second Chebyshev polynomials, integrodifferential systems are converted into a system of algebraic equations. The approximate solutions of integrodifferential systems are derived. The numerical examples illustrate that the algorithms are valid.
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