A new light trapping TCO for nc-Si:H solar cells

Selvan, J. A. Anna; Delahoy, A. E.; Guo, Shaoqiang; Li, Yuan Min

doi:10.1016/j.solmat.2005.09.018

Cited by 135 publications

(52 citation statements)

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“…Transparent conducting oxides (TCOs) including tin oxide (SnO 2 ), indium oxide (In 2 O 3 ), zinc oxide (ZnO), and cadmium oxide (CdO) have attracted much attention due to their tremendous importance in optical and electrical applications [1][2][3]. Extensive efforts have been made to obtain high quality TCO films with high conductivity and transparency.…”

Section: Introductionmentioning

confidence: 99%

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Structural, optical, and electrical properties of indium-doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition

et al. 2013

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TitleStructural, optical, and electrical properties of indium doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition cm 2 /Vs, and transmittance over 80% (including the glass substrate) from 500-1500 nm. The optical bandgap of the films was found to be in the range of 2.7 to 3.2 eV using both the Tauc relation and the derivative of transmittance. The observed widening of the optical bandgap with increasing carrier concentration can be described well only by considering bandgap renormalization effects along with the Burstein-Moss shift for a nonparabolic conduction band.

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Section: Introductionmentioning

confidence: 99%

“…Aside from environmental issues, doped CdO materials are nearly ideal for photoelectrical and other possible applications, such as solar energy harvesting, optical communications, gas sensors, thin-film resistors, IR heat mirrors, etc. [3,7,13].…”

Section: Introductionmentioning

confidence: 99%

Structural, optical, and electrical properties of indium-doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition

et al. 2013

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“…They are widely used for many applications such as flat panel display, light emitting diodes and photovoltaic cells [5][6][7]. Among these TCO, Zinc oxide (ZnO) has received considerable attention for optoelectronic application due to its low electrical resistivity and high transparency in the visible range of solar spectrum [8].…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of Mn-Doped ZnO Thin Films Prepared by SILAR Method

Karunakaran

Maheswari

Kasirajan

et al. 2017

ILCPA

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Abstract. The growth of highly textured Mn doped Zinc oxide (ZnO) thin films with a preferred (002) orientation has been reported by employing successive ionic layer growth by adsorption reaction (SILAR) using a sodium zincate bath on glass substrates has been reported. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM) measurement. The XRD analysis reveals that the films were polycrystalline. Morphology of the films was found to be uniform with smaller grains and exhibits a structure with porous. The calculated Band gap value was found to be 3.21 eV prepared at 15 mM MnSO 4 concentration.

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“…They are used as transparent conducting coatings, and have been widely used in a variety of electronic and optoelectronic device applications [5][6][7][8][9][10][11] such as organic light emitting diodes (OLED), liquid crystal displays (LCD), solar cells [12][13][14][15][16][17], and anti-reflection casting. To date, a number of research projects have been successfully carried out in the area of TCO materials.…”

Section: Introductionmentioning

confidence: 99%

Effect of SiO₂and Nb₂O₅Buffer Layer on Optical Characteristics of ITO Thin Film

Kwon¹,

Jang²

2015

Transactions on Electrical and Electronic Materials

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This paper presents the results of the optical characteristics of ITO thin film with different buffer layer thicknesses of SiO 2 and Nb 2 O 5 for touch sensor application. SiO 2 and Nb 2 O 5 buffer layers were deposited using RF magnetron sputtering equipment. The buffer layers were inserted between glass and ITO layers. In order to compare with the experimental results, the Essential Macleod Program (EMP) was adopted. Based on EMP simulation, the [Nb 2 O 5 |SiO 2 |ITO] multi-layered thin film exhibited high transmittance of more than 85% in the visible region. The actual experimental results also showed transmittance of more than 85% in the visible region, indicating that the simulated results were well matched with the experimental results. The sheet resistance of ITO based film was about 340 Ω/sq. The surface roughness maintained a relatively small value within the range of 0.1~0.4 nm when using the Nb 2 O 5 and SiO 2 buffer layers.

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A new light trapping TCO for nc-Si:H solar cells

Cited by 135 publications

References 4 publications

Structural, optical, and electrical properties of indium-doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition

Structural, optical, and electrical properties of indium-doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition

Structural and Optical Properties of Mn-Doped ZnO Thin Films Prepared by SILAR Method

Effect of SiO₂and Nb₂O₅Buffer Layer on Optical Characteristics of ITO Thin Film

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A new light trapping TCO for nc-Si:H solar cells

Cited by 135 publications

References 4 publications

Structural, optical, and electrical properties of indium-doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition

Structural, optical, and electrical properties of indium-doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition

Structural and Optical Properties of Mn-Doped ZnO Thin Films Prepared by SILAR Method

Effect of SiO2and Nb2O5Buffer Layer on Optical Characteristics of ITO Thin Film

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Effect of SiO₂and Nb₂O₅Buffer Layer on Optical Characteristics of ITO Thin Film