2005
DOI: 10.1016/j.tsf.2005.01.084
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Crystallization of silicon films by rapid joule heating method

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Cited by 8 publications
(2 citation statements)
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“…3 The demand for higher performance devices on glass and plastics has led to studies on techniques of crystallization of silicon, such as metal induced lateral crystallization ͑MILC͒, 4,5 sequential lateral solidification 6,7 and rapid melting and growth from melt of 50-250 m structures using laser annealing 8 or Joule heating through chromium heaters. 9 These approaches typically result in large-grain polycrystalline Si structures. In this work, melting and resolidification of Si microwires through self-heating using single, microsecond voltage pulses ͑Fig.…”
mentioning
confidence: 99%
“…3 The demand for higher performance devices on glass and plastics has led to studies on techniques of crystallization of silicon, such as metal induced lateral crystallization ͑MILC͒, 4,5 sequential lateral solidification 6,7 and rapid melting and growth from melt of 50-250 m structures using laser annealing 8 or Joule heating through chromium heaters. 9 These approaches typically result in large-grain polycrystalline Si structures. In this work, melting and resolidification of Si microwires through self-heating using single, microsecond voltage pulses ͑Fig.…”
mentioning
confidence: 99%
“…(6) 반면 JIC 방법은 전도성 박막층에 전류를 흘려 이를 통한 Joule 가열로 대면적의 비정질 실리콘 을 매우 빠르게 결정화 할 수 있는 방법으로 기존 의 단점을 극복할 수 있는 결정화 방법으로 기대 된다. (7,8) Fig. 6 Time duration for peak temperature greater than T sp with respect to input-pulse period Table 1 Temperature dependent properties Amorphous Silicon (9) Molybdenum (10) T…”
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