It is shown that a density of states (DOS) proportional to the excitation energy, a so-called polar-like DOS, can arise in odd-parity states, with the superconducting gap vanishing at points even though the spin-orbit interaction for Cooper pairing is strong. Such gap structures are realized in the nonunitary states, F 1u (1, i, 0), F 1u (1, ε, ε 2 ), and F 2u (1, i, 0), classified by Volovik and Gorkov (1985 Sov. Phys.-JETP 61 843). This is due to the gap vanishing in a quadratic manner around a point on the Fermi surface.
Polycrystalline silicon thin films were grown on glass by two-steps, i.e., deposition of seeds on glass (1) and growth epitaxy-like on the seeds (2). For the growth of seeds, the surface reaction was intentionally enhanced by impingment of atomic hydrogen at rather high temperature (450 C). Strongly textured polycrystalline Si exhibiting (220) preferential orientation was grown epitaxy-like on the seeds.
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