Contact Melting of Aluminum-Silicon Structures under Conditions of Thermal Shock

Скворцов, А. А.; Koryachko, M. V.

doi:10.4028/www.scientific.net/kem.771.118

Cited by 17 publications

(5 citation statements)

References 9 publications

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“…The area of the obtained single-layer polycrystalline graphene is more than 99% of the total surface area. It should be noted that the thermal conductivity coefficient [9] of polycrystalline graphene will be lower than the thermal conductivity coefficient of the single crystal graphene shown in Fig. 3.…”

Section: T °Cmentioning

confidence: 80%

Application of Graphene in The Cooling System of a Personal Electronic Computer

et al. 2021

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A study of the application of a graphene-based cooling system for a personal electronic computer (PC) is presented. The features of using monocrystalline and polycrystalline graphene in practice are analyzed. A comparison is made with the materials currently used in the cooling systems of a PC. The heat flux densities are calculated as a function of the temperature between the copper plate and the water adsorbate and between the two layers of polycrystalline graphene and water adsorbate. The prospects for the use of graphene in cooling systems of PCs are outlined.

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Section: T °Cmentioning

confidence: 80%

Application of Graphene in The Cooling System of a Personal Electronic Computer

et al. 2021

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“…Earlier (Skvortsov et al, 2018;Skvortsov et al, 2016a) we revealed that, at high-power electric pulses (pulse duration τ ~ 500 s and pulse power P i = 5…17 W), the degradation processes in the binary metallization systems are related to formation of a melted zone (when the metal melting temperature is achieved) and contact melting processes that occur at the metal-semiconductor interface.…”

Section: Resultsmentioning

confidence: 99%

“…The formation of test structures was performed with optical photolithography (Figure 3, a-d). The investigation of test structures was made using the voltmeter-ammeter method from the electrical response taken from different structure areas in the passage of single current pulses of different forms (Skvortsov et al, 2018;Skvortsov et al, 2016b). The experimental investigation of degradation processes was performed for the test structures (Figure 3, e) from the switching oscillograms U(t).…”

Section: Methodsmentioning

confidence: 99%

The Effect of Thin Dielectric Layers at Silicon on Interconnection Heating Dynamics at Thermal Shocks

Скворцов¹,

Koryachko²,

Skvortsova³

2019

PTQ

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The relevance of the study is due to the fact that in the conditions of development of micro-and nanoelectronics, it is necessary to pay attention to resistive switching systems, which are the basis in the structures of these areas of electronics. The work deals with the investigation of the role of thin dielectric layers of silicon oxide and nitride on interconnection heating dynamics at monocrystalline silicon plates. The leading method to the study of this problem is the method of experiment, which allows identifying the features of the influence of the dielectric sublayer on the thermal regimes of multilayer systems. It is shown that passage of current pulses (amplitude up to 6x1010 A/m² and duration up to 600 μs) leads to thermal damage of interconnections right up to breaking the electric circuit. The character of destruction strongly depends on the quality of deposition of dielectric and metal films as well as on the state of the dielectric-metal interface. It was found that the oscillograms of the inclusion, taken during the passage of a current pulse, clearly reflect the change in the dimensional (h2) and thermal (λ2) parameters of the dielectric sublayers; considered the thermal degradation mechanisms of the aluminum metallization systems with thin dielectric sublayers related to its melting; it was found that formation of melted zones is related to local reduction of film cross-section and consequently to the appearance of a melted zone that coagulates into drops in the course of current pulse passing and promotes breaking the electric circuit. The proposed method can be applied to assess the thermal properties of thin films of dielectrics.

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“…A total of 12 bonding pads (1–12, Fig. 1 a) registered the U(t) signal from different parts of the test structure [ 15 , 16 ]. Degradation processes were experimentally studied on test structures with an increasing amplitude of a rectangular current pulse j > 6 × 10 10 A/m 2 and duration τ > 500 μs.…”

Section: Methodsmentioning

confidence: 99%