Purpose
This study aims to examine the electromigration processes resulting from thermal overloads of semiconductor devices. While in operation, parts of such devices can heat up to 330°C for a short period, resulting in the emergence of molten zones and the devices’ inevitable degradation. Therefore, this study examines the mechanisms behind the formation and migration of silver-based molten zones in bulk germanium and on its surface.
Design/methodology/approach
Experimental data concerning the correlation between the migration velocities of the inclusions and their sizes are obtained.
Findings
By comparing these experimental data with known electromigration models, it is concluded that inclusions move through the mechanism of melting and crystallization. The dynamics of Ge–Ag zones in the volume of a germanium crystal are compared to those on its surface and accelerated electromigration on the surface of the crystal is observed. This increased migration velocity is shown to be associated with additional contributions of the electrocapillary component.
Originality/value
The results of this study can be used to calculate the operating modes of semiconductor power devices under intense heat loading.
The work is devoted to processes during melting of thin aluminium film on silicon surface in pulse current mode. An experiment was conducted to study the dynamics during the onset of the liquid phase on a metal film. Besides, the process of formation droplet localization zones is considered. The experimental part revealed critical current values during an electrical explosion of thin metal films near the thermal shock source. Using the oscillographic method, the temperature profile of the metallization track is calculated.
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