Features of Melt Droplet Formation during Electrical Destruction Aluminum Films on the Semiconductor Surface

Abstract

The work is devoted to processes during melting of thin aluminium film on silicon surface in pulse current mode. An experiment was conducted to study the dynamics during the onset of the liquid phase on a metal film. Besides, the process of formation droplet localization zones is considered. The experimental part revealed critical current values ​ during an electrical explosion of thin metal films near the thermal shock source. Using the oscillographic method, the temperature profile of the metallization track is calculated.

Features of the occurrence of mechanical stresses in the semiconductor substrate when operating in thermal cycling mode

“…An Al-based metallization system on the surface of the plates was formed by optical photolithography (3 µm thick), deposited by electron beam evaporation in a vacuum at a residual pressure of 2•10 -4 Pa. Some wafers were pre-coated with pyrolytic films of silicon oxide (SiO2) with a thickness of 0.1÷0.3 µm [12][13].…”

“…The experimental setup, as before [12][13], consisted of a master oscillator, a current pulse shaper, and a digital storage oscilloscope. To determine the state of the metallization system, a METAM R-1 optical microscope was used; the state of the silicon substrate surface was examined using a Helios NanoLab 660 dual-beam scanning electron microscope.…”

“…Typical oscillograms U(t) during the passage of a series of current pulses are presented in Figure 2. The dynamics of changes in the temperature of the metal track T(t) was determined by the voltage drop U(t) [12]:…”