Features of the occurrence of mechanical stresses in the semiconductor substrate when operating in thermal cycling mode

Abstract

The work is devoted to the study of thermal processes in the "metal film-semiconductor substrate" structure when operating in a pulsed current mode. Experimental oscillograms, using the example of the Al-Si and Al-SiO2-Si structure, show that when a series of successive rectangular current pulses are passed through the metallized area, heat accumulates in the structure, which subsequently leads to melting of the metallization system, as well as the formation of an interphase boundary Al-Si. A study of the morphology of the silicon substrate was carried out. Based on the SEM results, it was revealed that when a single current pulse with a density j=5.10 10 A/m 2 and a duration of 500 µs was passed through, microcracks and chips were detected in silicon. Based on the temperature distribution on the surface of the semiconductor, the magnitude of mechanical stresses for the pulsed operating mode was assessed.