Comparison of Thermal Stability and Chemical Bonding Configurations of Plasma Oxynitrided Hf and Zr Thin Films

Lai, Yi-Sheng; Lu, Chun-Liang; Chen, Limin; Chen, Jen‐Sue

doi:10.1149/1.1993468

Cited by 11 publications

(7 citation statements)

References 35 publications

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“…A small magnitude indicates a fast growth, while a large magnitude indicates a slow growth. In this work, the E a value for IL growth in between the Zr-oxynitride and SiC substrate is comparable with the report demonstrated by Lai et al 33 In that report, the Zr-oxynitride was produced by sputtering of Zr metal based on Si substrate, followed by N 2 O plasma The featureless pattern of as-deposited Zr metal on SiC verifies the amorphous dominance in the sample, as shown in spectrum (a) in Fig. 4.…”

Section: Resultssupporting

confidence: 90%

Metal-Oxide-Semiconductor Characteristics of Zr-Oxynitride Thin Film on 4H-SiC Substrate

Wong

Cheong

2012

J. Electrochem. Soc.

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Sputtered Zr on 4H-SiC substrate and followed by simultaneous oxidation and nitridation in nitrous oxide ambient at various temperatures (400-900 • C) for 15 min have been systematically investigated. The structural and electrical properties of the samples were evaluated. Energy-filtered transmission electron micrographs demonstrated that an interfacial layer (IL) of 1.44 to 4.20 nm had been formed in between a bulk oxide of 14.63 to 18.53 nm and the SiC substrate, depending on the temperature. The calculated activation energies for the bulk oxide, which was Zr-oxynitride, IL, and total oxide growth were −0.0335 eV, 0.1543 eV, and −0.0078 eV, respectively. Supportive results were obtained from X-ray diffractometer, Raman spectrometer, and atomic force microscope. The electrical results revealed that 500 • C oxidized/nitrided sample has demonstrated the highest breakdown field and reliability. This was attributed to the lowest total interface trap, effective oxide charge, and highest barrier height between conduction band edge of oxynitride and semiconductor.The current progress in semiconductor industry is mainly focusing in four parallel directions, which include downscaling of circuit elements on an inexpressible scale, reducing its power consumption, increasing operation speed, and tolerance-temperature range. 1, 2 To realize next generation metal-oxide-semiconductor (MOS)-based devices for high power and/or high radiation, integration of functional gate oxides on wide bandgap (WBG) semiconductors are of interest. 3-7 Silicon carbide (SiC) has several merits over other WBG semiconductors due to its commercial availability and ability to grow native oxide (SiO 2 ). 8, 9 Amongst many SiC polytypes, 10, 11 4H-SiC offers a wide bandgap of 3.26 eV, high breakdown field strength of ∼3 MV/cm, high saturation electron drift velocity of ∼2×10 7 cm/s, and high thermal conductivity of ∼3.7 W/cm • C. 9, 12, 13 Demonstration of these properties makes SiC-based MOS devices potentially suited for operation under harsh conditions.In order to fabricate these devices, the gate oxide must be able to bear a high transverse electric field and to possess a good reliability, so that leakage current through the gate oxide could be minimized. To date, thermally nitrided-SiO 2 on SiC is still considered as the first choice gate oxide. 7, 14-21 Nonetheless, its low dielectric constant (κ) value of 3.9, as compared to SiC with κ value of 10, could cause oxide breakdown and reliability issues. According to Gauss law: 22The high electric field strength in SiC of ∼3 MV/cm, would give a high electric field of ∼7.69 MV/cm in SiO 2 , in which, it is equivalent to a factor of ∼2.56 times higher electric field being imposed on the gate oxide than on the SiC. Consequently, the gate oxide may electrically break down much earlier than the SiC substrate thus depletes the objective of using SiC as the primer substrate for high power, high temperature, and/or high radiation applications. An approach to circumvent this is to supersede the relatively lo...

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Section: Resultssupporting

confidence: 90%

Metal-Oxide-Semiconductor Characteristics of Zr-Oxynitride Thin Film on 4H-SiC Substrate

Wong

Cheong

2012

J. Electrochem. Soc.

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“…Nitrogen (N) incorporation occurs during the NH 3 post-deposition anneal (PDA) step after high-k deposition. Because N bonds weakly to Hf [25], during the NH 3 anneal, N funnels more easily through the high Hf content (or low Si content) dielectric and accumulates at the bottom oxide layer where Si content is high. In the bulk of the dielectric, N bonds either to Hf or Si, but the Hf-bonded N diffuses out easily later in the process.…”

Section: Ecs Transactions 1 (5) 609-623 (2006)mentioning

confidence: 99%

High Performance Metal Gate CMOSFETs with Aggressively Scaled Hf-Based High-k

Song¹,

Zhang

Bae³

et al. 2006

ECS Trans.

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The optimization of MOSFET performance with Hf-based high-k and TiN metal gate is discussed. MOSFET performance and mobility of metal and poly gate on both high-k and SiO2 are compared. Optimization of the thickness and composition of Hf-silicate is discussed in terms of charge trapping and boron diffusion. The effect of metal gate thickness is also investigated. Appropriate dry and wet etch processes are found to effectively eliminate the metal foot and high-k undercut. Impressive Ion- Ioff characteristics have been achieved by applying an optimized gate-first CMOS flow to the high-k/metal stack. Ion = 1100µA/µm and 540µA/µm was attained for N and PMOSFETs with Vdd = 1.2V and Ioff = 100nA/µm.

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“…In materials science, the oxides, nitrides and oxynitrides of transition metals are of great interest due to their electrical and optical properties as well as their inert chemical behavior [1][2][3][4][5][6][7][8][9][10][11][12][13]. Zirconium oxynitride (ZrO x N y ) thin film has been extensively applied in the fields of wear and corrosion resistant coating [6,7], decoration [9] and microelectronic devices [1] (gate dielectric in silicon-based [8] and silicon carbidebased [10,14] metal-oxide semiconductor devices, and biomedical devices etc.…”

Section: Introductionmentioning

confidence: 99%

The conduction process of grain and grain boundary in the semiconductive zirconium oxynitride thin film

Lin

Zhan

et al. 2019

Semicond. Sci. Technol.

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Semiconductive zirconium oxynitride (ZrO x N y ) thin film was deposited on a sapphire substrate by reactive magnetron sputtering, and micro temperature sensors based on the film were fabricated by a microelectromechanical system (MEMS) micromachining process. The detailed structure of the ZrO x N y thin film was examined using x-ray diffractometer (XRD), scanning electron microscopy (SEM), field emission transmission electron microscope (FE-TEM), and the depth profiles of different elements and zirconium compounds in nanoscale were further researched by depth x-ray photoelectron spectroscopy (XPS). The conduction process of the whole film, the grain and the grain boundary of ZrO x N y thin film were investigated with temperature dependent AC impedance spectroscopy. It is found that the conductivity of the ZrO x N y film is dominated by thermal activation and Mott variable range hopping (VRH) in the temperature range of 300 K-75 K and 75 K-10 K, respectively. The conduction process of the grain and grain boundary follow thermal activation model in relatively high temperature range. With the reduction of temperature the conduction process of the grain boundary obeys Mott VRH, while concerning the conduction process for the grain, the nearest-neighbor hopping (NNH) should also be taken into account in addition to Mott VRH.

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Comparison of Thermal Stability and Chemical Bonding Configurations of Plasma Oxynitrided Hf and Zr Thin Films

Cited by 11 publications

References 35 publications

Metal-Oxide-Semiconductor Characteristics of Zr-Oxynitride Thin Film on 4H-SiC Substrate

Metal-Oxide-Semiconductor Characteristics of Zr-Oxynitride Thin Film on 4H-SiC Substrate

High Performance Metal Gate CMOSFETs with Aggressively Scaled Hf-Based High-k

The conduction process of grain and grain boundary in the semiconductive zirconium oxynitride thin film

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