Abstract:Semiconductive zirconium oxynitride (ZrO x N y ) thin film was deposited on a sapphire substrate by reactive magnetron sputtering, and micro temperature sensors based on the film were fabricated by a microelectromechanical system (MEMS) micromachining process. The detailed structure of the ZrO x N y thin film was examined using x-ray diffractometer (XRD), scanning electron microscopy (SEM), field emission transmission electron microscope (FE-TEM), and the depth profiles of different elements and zirconium comp… Show more
“…reactive sputtering process. [25] Lin et al [26] found that the electrical conductivity of Zr x N y O z films is controlled first by thermal activation (300-75 K) and next by Mott variable range hopping (75-10 K).…”
Section: Introductionmentioning
confidence: 99%
“…[ 24 ] Zr x N y O z has lately received attention due to its unique properties tuned by the admixture of nitrogen and oxygen during the reactive sputtering process. [ 25 ] Lin et al [ 26 ] found that the electrical conductivity of Zr x N y O z films is controlled first by thermal activation (300–75 K) and next by Mott variable range hopping (75–10 K).…”
Herein, highly crystalline ZrxNy and ZrxNyOz coatings are achieved by the deposition via high‐power impulse magnetron sputtering. Various N2 and N2/O2 gas mixtures with argon are investigated. The chemical composition and, as a result, mechanical properties of the deposited layer can be tailored along with morphological and crystallographic structural changes. The corrosion resistance behavior is studied by potentiodynamic measurements and electrochemical impedance spectroscopy in a sample of synthetic wastewater designed to imitate real‐life domestic wastewater. The corrosion current density of the ZrxNyOz coating is in the range of 33–70 μA cm−2, whereas for the zirconium nitride layers, values below 1.0 μA cm−2 are achieved. The highest corrosion resistance of 64 nm year−1 is observed for the ZrxNy coating deposited with 1.00% N2 content in the gas mixture with a corrosion potential of −0.41 V Ag/AgCl.
“…reactive sputtering process. [25] Lin et al [26] found that the electrical conductivity of Zr x N y O z films is controlled first by thermal activation (300-75 K) and next by Mott variable range hopping (75-10 K).…”
Section: Introductionmentioning
confidence: 99%
“…[ 24 ] Zr x N y O z has lately received attention due to its unique properties tuned by the admixture of nitrogen and oxygen during the reactive sputtering process. [ 25 ] Lin et al [ 26 ] found that the electrical conductivity of Zr x N y O z films is controlled first by thermal activation (300–75 K) and next by Mott variable range hopping (75–10 K).…”
Herein, highly crystalline ZrxNy and ZrxNyOz coatings are achieved by the deposition via high‐power impulse magnetron sputtering. Various N2 and N2/O2 gas mixtures with argon are investigated. The chemical composition and, as a result, mechanical properties of the deposited layer can be tailored along with morphological and crystallographic structural changes. The corrosion resistance behavior is studied by potentiodynamic measurements and electrochemical impedance spectroscopy in a sample of synthetic wastewater designed to imitate real‐life domestic wastewater. The corrosion current density of the ZrxNyOz coating is in the range of 33–70 μA cm−2, whereas for the zirconium nitride layers, values below 1.0 μA cm−2 are achieved. The highest corrosion resistance of 64 nm year−1 is observed for the ZrxNy coating deposited with 1.00% N2 content in the gas mixture with a corrosion potential of −0.41 V Ag/AgCl.
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