In this letter, we report a novel transient/ biodegradable transistor. The Al:ZnO (AZO) source, drain, and gate electrodes are directly self-assembled on the free-standing sodium alginate (SA) membrane by magnetron sputtering, and the SA membrane is used simultaneously as the substrates and dielectrics for the transistor. Due to the strong lateral electrostatic coupling effects of SA membrane, the transistor can operate at a low voltage of 1 V. Dissolution tests of the transistor in deionized water suggest its completely physical transience within 1 h.Index Terms-Low voltage transistors, free-standing sodium alginate membranes, transient/biodegradable transistors.

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HfOxNy thin films were deposited on polished and oxidized silicon wafers at different nitrogen-oxygen gas flow rates by DC magnetron reactive sputtering, and temperature sensors based on these HfOxNy thin films were fabricated using a microelectromechanical system micromachining process. The resistance–temperature dependencies of these sensors were studied in the temperature range of 4.2 K–300 K, and the effect of the sputtering gas flow rate on the initial resistivity and sensitivity [temperature coefficient of resistance and absolute sensitivity (Sa)] was discussed. One of these sensors was subjected to 15 cycles between 300 K and 4.2 K for thermal cycle stability testing. The performances of these sensors were compared to the now available negative temperature coefficient thin film temperature sensors (ZrNx, CrNx, RuO2, and ZrOxNy), and they show very outstanding sensitivity and thermal cycle stability. Furthermore, the conduction mechanism of HfOxNy thin films in the cryogenic region was studied for the first time.

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