Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

Kumar, Rahul; Mukhopadhyay, Partha; Bag, Ankush; Jana, Sanjay Kumar; Chakraborty, Apurba; Das, Subhashis; Mahata, Mihir Kumar; Biswas, Dhrubes

doi:10.1016/j.apsusc.2014.10.155

Cited by 12 publications

(4 citation statements)

References 26 publications

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“…Surfaces of all the samples, reported in this work, show a cross‐hatch (CH) pattern (confirming the 2D mode of growth) except S56 (due to the 3D growth of highly mismatched InGaAs). CH surfaces are asymmetric in nature due to the asymmetric behavior of α and β dislocations , i.e., CH roughness and/or period in orthogonal <110> directions are different. Root mean square (RMS) roughness and CH period in orthogonal <110> directions have been listed in Table .…”

Section: Resultsmentioning

confidence: 99%

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Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination

Kumar

Biswas

2016

Crystal Research and Technology

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Crystallographic tilt and Surface topography of InGaAs and InAlAs based metamorphic buffer structures on GaAs (001) substrate grown by molecular beam epitaxy (MBE) under varying growth conditions have been investigated. Compressively strained metamorphic buffer layers show anisotropic strain relaxation. A novel tilt determination technique based on X-ray diffraction has been developed which can separate the effect of anisotropic strain. Tilt has been found to depend on compositional grading scheme, growth temperature and surface irregularities. Samples having random surfaces show smaller tilt than that of samples showing regular cross-hatch. At higher growth temperature, reduction of tilt has been observed and correlated with thermal activation of otherwise inactive slip systems at low temperature. At low temperature and also for continuously graded samples, reduction of tilt has been observed and correlated with the slower relaxation that provide the opportunity for all the slip systems to participate and compete.

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Section: Resultsmentioning

confidence: 99%

“…BEDE D1 (Jordon Valley) diffractometer equipped with Cu Kα 1 (1.54056 Å) line and a Ge (004) channel‐cut crystal has been employed to perform the HRXRD measurements. Measurement setup for the double crystal analyzer (DCA) and triple axis (TA) have been mentioned in detail in our earlier publications .…”

Section: Methodsmentioning

confidence: 99%

Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination

Kumar

Biswas

2016

Crystal Research and Technology

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“…The introduction of a buffer layer has been proved to be an efficient method to filter the dislocations and increase the crystal growth quality. The buffer layers are classified according to their material systems, such as ternary materials, e.g., InGaAs [1,2], InAlAs [3,4], and InAsP [5,6], and quaternary materials, e.g., InAlGaAs [7,8], InGaAsP [9], and AlGaAsSb [10]. The ternary InAlAs and InAsP are the commonly used InP-based buffer layer materials.…”

Section: Introductionmentioning

confidence: 99%

Step-graded InAsP buffer layers with gradient interface grown via metal organic chemical vapor deposition

Wei

2019

SN Appl. Sci.

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A highly mismatched InGaAs metamorphic layer is grown by introducing a gradient interface between step-graded InAsP buffer layers via metalorganic chemical vapor deposition. The crystal growth quality of the gradient interface metamorphic layers and the one without gradient interface are compared. According to the tested results, applying a gradient interface between the step-graded InAsP buffer layers halves the surface roughness and doubles the photoluminescence intensity of the epilayers. This proves that the introduction of the gradient interface can improve the crystal quality and enhance the dislocation fusion during the growth of the large-lattice-mismatch materials.

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“…GaAs exhibits outstanding electron transport properties and during the previous decades it has been widely used as a substrate material. [1][2][3][4][5][6] Due to its high conversion efficiencies and high mobility, GaAs can be also applied in solar cells and high-speed digital circuits, respectively. [7][8][9][10] High pressure is a powerful way to induce dramatic changes in the crystal structures and electronic structures of materials.…”

Section: Introductionmentioning

confidence: 99%

Pressure induced semiconductor–metal phase transition in GaAs: experimental and theoretical approaches

Jia

Zhang

et al. 2016

RSC Adv.

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Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

Cited by 12 publications

References 26 publications

Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination

Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination

Step-graded InAsP buffer layers with gradient interface grown via metal organic chemical vapor deposition

Pressure induced semiconductor–metal phase transition in GaAs: experimental and theoretical approaches

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