Pressure induced semiconductor–metal phase transition in GaAs: experimental and theoretical approaches

Abstract

GaAs undergoes a semiconductor–metal transition, which was investigated by in situ electrical measurements and first-principles calculations under a high pressure.

A thermodynamic approach of self- and hetero-diffusion in GaAs: connecting point defect parameters with bulk properties

“…( 11), for pressures up to 10 GPa above which GaAs transforms from the zinc blende to the orthorhombic structure. 8,46 The values of the self-diffusion coefficients D(0,T) at zero pressure that were used in Eq. ( 11), correspond to the reported experimental values of Fig.…”

“…3,6 The scientific interest for GaAs is still undiminished, both from a practical and from a theoretical point of view. 7,8 For the efficient miniaturization and optimization of electronic devices, it is necessary to understand defect processes formed during the growth processes. 9 Previous studies provided fundamental insights into the diffusion and other defect processes of III-V semiconductors.…”

Abnormal Phase Transition and Band Renormalization of Guanidinium-Based Organic–Inorganic Hybrid Perovskite

“…The prominent PL peak first red-shifts from 2.50 to 2.34 eV at a rate of −28.3 meV/GPa (Figure c). This red shift response with pressure is usually observed in conventional material systems such as porous silicon, As 2 S 3 , GaAs, 2D ReS 2 , ReSe 2 , and other traditional semiconductors. − Further applied pressure above 5.9 GPa causes PL emission from 2D Gua 2 PbI 4 to blue shift from 2.34 to 2.45 eV as the pressure increases from 5.9 to 9.8 GPa (+30.8 meV/GPa) and remains nearly constant from 10.8 to 13.8 GPa with a minuscule change from 2.45 to 2.46 eV.…”

Pressure-induced abnormal ionic–polaronic–ionic transition sequences in AgBr

“…In general, most of the sudden changes in the electrical properties of materials under high pressure can be attributed to pressure-induced structural phase transitions. 11,12 However, it is very strange that the ionic-electronic or polaronic transition at approximately 5.0 GPa occurs with the absence of a structural phase transition in AgBr. Besides, whether electrons or polarons are the dominant carriers in the pressure range from 5.0 to 8.6 GPa is still unknown.…”

“…9,10 Besides the above approaches, pressure loading is another option to modify the electrical properties of solid ionic conductors by changing the crystal and electronic structures. 11 Recently, the ionic transport properties of silver halides have been studied under high pressures. 12,13 For AgI, the ionic conductivity was raised by three orders of magnitude under high pressures and a pressure-induced superionic state was found at ambient temperature in its KOH-type structure.…”