A thermodynamic approach of self- and hetero-diffusion in GaAs: connecting point defect parameters with bulk properties

Saltas, V.; Chroneos, Alexander; Vallianatos, Filippos

doi:10.1039/c6ra09206c

Cited by 30 publications

(31 citation statements)

References 56 publications

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“…17,18 Point defects, such as oxygen, As Ga antisite, Ga/As vacancies, and the complex of these defects, are known to play an important role in determining the properties of GaAs. [19][20][21][22] Our results show that GaAs crystals exhibit CDC behavior in the temperature above room temperature. This behavior is argued to be a bulk effect caused by defect points.…”

Section: Introductionmentioning

confidence: 54%

Point-defect-induced colossal dielectric behavior in GaAs single crystals

et al. 2017

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Section: Introductionmentioning

confidence: 54%

Point-defect-induced colossal dielectric behavior in GaAs single crystals

et al. 2017

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“…In the cBΩ model, the defect Gibbs energy is assumed to be proportional to the isothermal bulk modulus (B) and the mean volume per atom (Ω). Recent advances in computational materials science and experimental techniques have regenerated the interest in its use to predict defect processes under extreme conditions [110][111][112][113][114][115][116][117][118][119].…”

Section: Summary and Future Outlookmentioning

confidence: 99%

Toward Defect Engineering Strategies to Optimize Energy and Electronic Materials

et al. 2017

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Abstract:The technological requirement to optimize materials for energy and electronic materials has led to the use of defect engineering strategies. These strategies take advantage of the impact of composition, disorder, structure, and mechanical strain on the material properties. In the present review, we highlight key strategies presently employed or considered to tune the properties of energy and electronic materials. We consider examples from electronic materials (silicon and germanium), photocatalysis (titanium oxide), solid oxide fuel cells (cerium oxide), and nuclear materials (nanocomposites).

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“…In previous studies it was proposed that c act is a constant that is independent of temperature and pressure to least to a first approximation [21,24]. Finally, for constant temperature the D can be studied at any pressure (refer for example to [32][33][34]). …”

Section: The Cbx Modelmentioning

confidence: 99%

Gold and silver diffusion in germanium: a thermodynamic approach

Panayiotatos

Вовк

Chroneos

2016

J Mater Sci: Mater Electron

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Diffusion properties are technologically important in the understanding of semiconductors for the efficent formation of defined nanoelectronic devices. In the present study we employ experimental data to show that bulk materials properties (elastic and expansivity data) can be used to describe gold and silver diffusion in germanium for a wide temperature range (702-1177 K). Here we show that the so-called cBX model thermodynamic model, which assumes that the defect Gibbs energy is proportional to the isothermal bulk modulus and the mean volume per atom, adequately metallic diffusion in germanium.

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A thermodynamic approach of self- and hetero-diffusion in GaAs: connecting point defect parameters with bulk properties

Abstract: GaAs diffusion is investigated with respect to temperature and pressure using a model that interconnects point defect with bulk properties.

Cited by 30 publications

References 56 publications

Point-defect-induced colossal dielectric behavior in GaAs single crystals

Point-defect-induced colossal dielectric behavior in GaAs single crystals

Toward Defect Engineering Strategies to Optimize Energy and Electronic Materials

Gold and silver diffusion in germanium: a thermodynamic approach

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