Step-graded InAsP buffer layers with gradient interface grown via metal organic chemical vapor deposition

Abstract

A highly mismatched InGaAs metamorphic layer is grown by introducing a gradient interface between step-graded InAsP buffer layers via metalorganic chemical vapor deposition. The crystal growth quality of the gradient interface metamorphic layers and the one without gradient interface are compared. According to the tested results, applying a gradient interface between the step-graded InAsP buffer layers halves the surface roughness and doubles the photoluminescence intensity of the epilayers. This proves that the introduction of the gradient interface can improve the crystal quality and enhance the dislocation fusion during the growth of the large-lattice-mismatch materials.