Chemischer Informationsdienst
 1979
DOI: 10.1002/chin.197909037
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ChemInform Abstract: SELECTIVE OXIDATION OF SILICON IN HIGH PRESSURE STEAM

Hirokazu Miyoshi1,
N. Tsubouchi2,
A. Nishimoto3

Abstract: Die selektive Oxidation von Si‐Substraten in Gegenwart von als Masken dienenden Si3N4‐Filmen wird mit Hilfe einer neuentwickelten Hochdruckapparatur bei 6.4 at im Temp.‐Bereich 800‐1 I00°C untersucht.

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