The selective oxidation of silicon was investigated using a high pressure oxidation apparatus at a steam pressure of 6.6 kg/cm 2 (6.4 atm) and at temperatures between 800 ~ and ll00~The conversion characteristics of the silicon nitride film into silicon dioxide film in high pressure steam was analyzed on the basis of the well-known linear-parabolic relationship. The activation energy for the parabolic rate constant was found to be about 3.15 eV, which was about 5 times larger than that (0.7 eV) for silicon. On the other hand, the activation energy for the linear rate constant was about 1.25 eV which was a little smaller than that (2.03 eV) for silicon. The conventional silicon nitride film was found to be able to mask the selective oxidation even in the high pressure steam. The lateral oxidation of the silicon substrate beneath the masking nitride film occurred rapidly, with decreasing oxidation temperature at the fixed pressure. The suppression of the lateral oxidation can be achieved by increasing the thickness of the masking nitride film and also by decreasing that of the oxide pad. This high pressure oxidation process was compatible with the conventional atmospheric process. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 129.105.215.146 Downloaded on 2015-03-25 to IP
An easily-handling radon instrument was developed for using on the job of radiation monitoring in atomic and radiation facilities and in the environment. This instrument was named as "Radon Survey Meter" because a handy-type instrument and this was driven with battery and/or AC power. The weight of radon survey meter was 3 kg. Air is sampled by open and close of drawer of gas container within 10 seconds and radon concentration is measured by 10minutes. From a practical test in natural environment and using a radon source, it is cleared that this survey-meter was performed in radon concentration of 20~10,000Bq/m 3 .
Die selektive Oxidation von Si‐Substraten in Gegenwart von als Masken dienenden Si3N4‐Filmen wird mit Hilfe einer neuentwickelten Hochdruckapparatur bei 6.4 at im Temp.‐Bereich 800‐1 I00°C untersucht.
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