Characterization of photoresist films exposed to high-dose implantation conditions

Croisy, Marion; Pargon, E.; Jenny, C.; Richard, C.; Guiheux, Denis; Mariolle, D.; Poulain, Christophe; Campo, Alain; Possémé, N.

doi:10.1116/1.5004127

Cited by 10 publications

(5 citation statements)

References 12 publications

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“…The preparing condition and structure of the samples used are shown in TABLE I. It is said that the high-dose ion implanted photoresist has a thin enriched carbon layer that is desorbed hydrogen and oxygen from photoresist by ion implantation (5). If desorption of hydrogen and oxygen from the photoresist continues, carbon content will be increase and finally only carbon will remain.…”

Section: Methodsmentioning

confidence: 99%

(Digital Presentation) High-Dose Ion-Implanted Photoresist Stripping Technology Employing High Temperature Single-Wafer SPM System

Sasahira¹,

Nakamura²,

Hamada³

et al. 2022

ECS Trans.

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We found that the high-dose ion-implanted photoresist can be removed with high efficiency without residue by using SPM heated to 250 °C. We evaluated the reaction mechanism in detail, and proposed a model: a heat consumption by vaporization of H2O, a heat gain by decomposition of H2O2, and a character change of SPM itself interact, the high-dose ion-implanted photoresist along with dopants is removed.

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Section: Methodsmentioning

confidence: 99%

(Digital Presentation) High-Dose Ion-Implanted Photoresist Stripping Technology Employing High Temperature Single-Wafer SPM System

Sasahira¹,

Nakamura²,

Hamada³

et al. 2022

ECS Trans.

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“…Patterning was done by using an Ar beam etch. In order to avoid the issues with photoresist mask hardening caused by Ar bombardment [19], patterning of ZrSi x was done through an intermediate Cr mask. For this, a 300 nm thick Cr layer was deposited by magnetron sputtering and patterned using photolithography and ammonium cerium (IV) nitrate-based wet etchant (step 3).…”

Section: Sample Fabricationmentioning

confidence: 99%

Fracture Toughness of Free-Standing ZrSi_x Thin Films Measured Using Crack-on-a-Chip Method

Shafikov¹,

Kruijs

Benschop

et al. 2022

J. Microelectromech. Syst.

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In this work, we experimentally measure fracture toughness of free-standing zirconium ZrSi x thin films using the crack-on-a-chip method. In this method, fracture toughness is determined from the analysis of cracks, which propagate and arrest in specially designed free-standing test structures. The test structures use a well-known double cantilever beam geometry, which enables crack arrest, and don't require any external force actuation, but instead rely on the internal tensile stress of the tested thin film. To produce the ZrSi x test structures, a universal fabrication process was developed and used, which avoids typical issues related to etch selectivity and that can be readily applied for other thin film materials. Unlike in previous studies, which used the crack-on-a-chip method, in this work crack initiation was triggered only after the test structures were fully fabricated, which allowed to avoid the influence of the fabrication process on the extracted toughness values. For this, blunt pre-cracks included in the structures were "sharpened" using focused ion beam, which resulted in rapid crack propagation and subsequent crack arrest. Mechanical analysis done by a finite element method to extract the values of fracture toughness, showed that buckling of the free-standing thin film test structures has a strong influence on the results of fracture toughness calculations and therefore cannot be ignored. The fracture toughness of ZrSi x thin films was determined to be 2.1±0.13 MPa * m 0.5 .[2021-0166]

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“…A patterned photoresist (PR) used as a mask exhibits a phenomenon in which ions are implanted deeply into the PR due to the bombardment of high-energy ions during the ion implantation. This process creates a dense crust on the PR surface [1]. Wet and dry stripping processes were previously used to remove the high-dose implanted PR.…”

Section: Introductionmentioning

confidence: 99%

Effects of RF bias frequency and power on the plasma parameters and ash rate in a remote plasma source

Zhang

Lee

et al. 2021

Plasma Sources Sci. Technol.

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The effects of the RF bias frequency (2–27.12 MHz) and power (0–50 W) on plasma parameters, i.e., effective electron temperatures, electron densities, and electron energy probability functions (EEPFs), were investigated in a remote plasma source. A small cylindrical Langmuir probe based on the Druyvesteyn method was used for the measurements. When the bias power was changed from 0 W to 10 W for each bias frequency, the electron density decreased and the effective electron temperature increased at a given antenna power. As the 2 MHz bias power increased to 50 W, the electron density increased remarkably, whereas the effective electron temperature decreased. Simultaneously, the EEPF evolved from a Druyvesteyn-like distribution to a nearly Maxwellian distribution. In contrast to 2 MHz, when increasing the bias power of 12.5 MHz or 27.12 MHz, there was no distinct change in the effective electron temperature by the bias power and the electron density increased slightly or barely changed. Moreover, the EEPFs retained a Druyvesteyn-like distribution during the bias power increase. These results reveal that the plasma parameters are more controllable at lower bias frequencies, and the analysis is presented in relation to the electron heating mechanism. Therewithal, the ash rate for a 2 MHz bias power was observed to be the highest among the three frequencies when the discharge was operated with pure oxygen.

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Characterization of photoresist films exposed to high-dose implantation conditions

Cited by 10 publications

References 12 publications

(Digital Presentation) High-Dose Ion-Implanted Photoresist Stripping Technology Employing High Temperature Single-Wafer SPM System

(Digital Presentation) High-Dose Ion-Implanted Photoresist Stripping Technology Employing High Temperature Single-Wafer SPM System

Fracture Toughness of Free-Standing ZrSi_x Thin Films Measured Using Crack-on-a-Chip Method

Effects of RF bias frequency and power on the plasma parameters and ash rate in a remote plasma source

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Characterization of photoresist films exposed to high-dose implantation conditions

Cited by 10 publications

References 12 publications

(Digital Presentation) High-Dose Ion-Implanted Photoresist Stripping Technology Employing High Temperature Single-Wafer SPM System

(Digital Presentation) High-Dose Ion-Implanted Photoresist Stripping Technology Employing High Temperature Single-Wafer SPM System

Fracture Toughness of Free-Standing ZrSix Thin Films Measured Using Crack-on-a-Chip Method

Effects of RF bias frequency and power on the plasma parameters and ash rate in a remote plasma source

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Product

Resources

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Fracture Toughness of Free-Standing ZrSi_x Thin Films Measured Using Crack-on-a-Chip Method