(Digital Presentation) High-Dose Ion-Implanted Photoresist Stripping Technology Employing High Temperature Single-Wafer SPM System

Sasahira, Konosuke; Nakamura, Satoshi; Hamada, K.; Jinbo, Sadayuki; Hattori, K.

doi:10.1149/10804.0185ecst

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2023

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“…1, Fig. 2 Moreover, SPM at 200°C is not relevant, as it is hotter than the sulfuric acid boiling temperature; its efficiency is less than expected, as demonstrated on amorphous carbon materials [5].…”

Section: Resultsmentioning

confidence: 95%

Sulfuric Acid Reduction in Post-Ash Cleans

Escarabajal

Caron

Garnier

et al. 2023

SSP

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Photoresist after implantation is commonly removed either by wet chemical dissolution with sulfuric acid, or by dry ash stripping followed with a wet cleaning. To prevent any photoresist residues, sulfuric acid is still conserved in post ash cleans as additional safety. However, by ensuring sufficient over ash time, SPM (Sulfuric acid Peroxide hydrogen Mixture) chemical need becomes less essential. This paper reevaluates the benefit of SPM after dry ash stripping regarding the environmental context. The advantages of dry ash stripping with clean, compared to wet stripping are outlined. The study introduces prior analyses on defectivity and material consumption. Finally, device matching and yield stability, defined as the main success criteria, are described.

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Section: Resultsmentioning

confidence: 95%