Sub-30 -nm hybrid lithography (electron beam∕deep ultraviolet) and etch process for fully depleted metal oxide semiconductor transistorsExtreme ultraviolet lithography ͑EUVL͒ using 13.5 nm wavelength light is the leading candidate to succeed 193 nm immersion lithography, enabling semiconductor chips with features smaller than 22 nm. Several major programs worldwide have developed this technology in recent years ͓D. A. Tichenor et al., OSA Proceedings on Soft X-Ray Projection Lithography, edited by A. M. Hawryluk and R. H. shipped the first EUV Alpha Demo tools ͑NA= 0.25 full-field scanners͒ to IMEC in Belgium ͓A. M. Goethals et al., Proc. SPIE 6517, 651709 ͑2007͔͒ and CNSE in Albany ͓O. Wood et al., Proc. SPIE 6517, 6517-041 ͑2007͔͒, USA. Currently the development of preproduction tools with targeted shipment of 2009 is well under way. This paper discusses the most critical items for EUVL development, namely, EUV imaging and EUV sources. Furthermore, it elaborates on the necessary development of masks and resists and, for example, quantifies how resist diffusion length can impact imaging capabilities. Results obtained and lessons learned with the Alpha Demo tools are discussed, as well as potential solutions to some of the remaining challenges. Additionally, this paper explains how EUV can realize high productivity ͑Ͼ100 wafers/ h͒ and high resolutions ͑Ͻ22 nm͒ to continue the cost-effective shrink of semiconductors for several generations.
A compact scanning optical microscope (SOM) based on the optics and the mechanics of a compact disc (CD) player has been constructed. The low weight and compact construction of a CD player offer the possibility of scanning the entire microscope with respect to a stationary object. The compact scanning optical microscope is capable of measuring object-induced amplitude and phase changes of the light and is equipped with automatic focusing. The laser in the CD player is replaced by the endface of a single-mode fiber. The end face of the fiber acts both as the emitting source and as a point detector. Thus confocal detection is obtained without the problem of positioning a point detector with respect to a point source.
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