High-NA EUV lithography exposure tool: advantages and program progress

Schoot, Jan van; Lok, Sjoerd; Setten, Eelco van; Maas, R.; Troost, Kars; Peeters, Rudy; Finders, Jo; Stoeldraijer, Judon; Benschop, Jos; Graeupner, Paul; Kuerz, Peter; Kaiser, Winfried

doi:10.1117/12.2572932

Cited by 34 publications

(36 citation statements)

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“…To this extent, the following RLS metrics of interest are used for quantification: critical dimension (CD), unbiased line width roughness (LWRunb), and dose to size (DTS). The Z-factor = CD 3 •LWRunb 2 •DTS is also considered as a performance tradeoff metric. Although pattern transfer after lithography is not investigated here, a specific range of resist thickness values is considered to ensure industrial process viability.…”

Section: Psi-asml Resist Screening Program Targetsmentioning

confidence: 99%

“…More specifically, the increase in computing power and storage capacities is enabled by the progress in lithographic methods through the downscaling of printed feature sizes. The most recent milestone in the resolution of high-volume manufacturing was achieved by deploying EUV lithography (EUVL) systems 1 , while the upcoming introduction of High-NA EUV scanners will be the next 2,3 . In addition to the development of high-NA EUV scanners, the advancement of next-generation resist materials remains a critical challenge 4,5 .…”

Section: Introductionmentioning

confidence: 99%

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EUV resist screening update: progress towards high-NA lithography

Allenet

Vockenhuber

Chen

et al. 2022

Advances in Patterning Materials and Processes XXXIX

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The improvement of EUV photoresists is a key enabler for the deployment of High-NA EUV lithography and future technology nodes. Research in this field is supported by a joint research program between PSI and ASML. This program is dedicated to supporting the EUVL community with the development of materials by carrying out resist screening experiments with the EUV interference lithography tool at PSI, with an emphasis on resolution improvement towards reaching High-NA EUV scanner specifications. The tool enables high-resolution patterning without limitations in terms of chemical outgassing or contamination and is, therefore, an effective method for the testing of novel EUV photoresists. In this work, we consider the progress monitored in the second half of 2021. We describe the exposure tool as well as the updates made to the resist characterization metrology implemented at PSI. Resist performances are quantified with regards to resolution, linewidth roughness, and sensitivity. We show an overview of the current development status through a comparative study of different resist platforms. Recent results show chemically amplified resists (CAR) and non-CAR printing 12 nm and 11 nm lines/spaces features, respectively. Limitations of each platform are displayed and general progress and perspectives are discussed to lead the way to higher resolution results.

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Section: Psi-asml Resist Screening Program Targetsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

EUV resist screening update: progress towards high-NA lithography

Allenet

Vockenhuber

Chen

et al. 2022

Advances in Patterning Materials and Processes XXXIX

View full text Add to dashboard Cite

show abstract

“…The program follows a set of general guidelines, which are depicted in Table 1. The goal of the resist screening program is to identify potential materials to enable patterning resolutions down to 8 nm HP, according to high-NA EUV scanner specifications 5 . With the emphasis on high resolution, both chemically-amplified resists (CAR) and non-CAR materials are investigated.…”

Section: Asml-psi Resist Screening Programmentioning

confidence: 99%

Progress in EUV resist screening by interference lithography for high-NA lithography

Allenet

Vockenhuber

Yeh

et al. 2021

International Conference on Extreme Ultraviolet Lithography 2021

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The introduction of novel photoresists is a critical enabler of future technology nodes, including the upcoming high-NA EUVL deployment. The development of EUV materials is investigated within the scope of a resist screening program between ASML and PSI. In this work, the EUV interference lithography tool at PSI is used to study materials performance in terms of the resolution-roughness-sensitivity tradeoff, with an emphasis on ultimate resolution. Here, we review the development status of different platforms by considering recent results obtained in the first half of 2021 (H1-2021). Patterning resolution of 11 nm half-pitch is achieved with both CAR and non-CAR materials, which indicates steady progress in the global resist development. Perspectives of this work are discussed towards enabling 8 nm half-pitch resolution solutions.

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“…They are the tool of choice for printing binary EUV masks. High-NA EUV masks 8,9,10 will require reduction in minimum feature size (MFS) and reduction of edge placement errors as illustrated in Figure 1. Additionally, it is expected that curvilinear mask patterning will also be deployed in the near future 11,12,13 .…”

Section: Introductionmentioning

confidence: 99%

Multibeam mask requirements for advanced EUV patterning

Chandramouli

Liu

Alberti

et al. 2022

Photomask Technology 2022

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Multibeam mask writers (MBMW) from IMS Nanofabrication developed in the last decade are currently being used for leading edge mask patterning. The ability to utilize low sensitivity resists required to pattern complex mask patterns with good edge placement control made MBMW the tool of choice for leading edge extreme ultraviolet (EUV) mask patterning. The next generation of High-NA EUV masks will require smaller features, more complex figures and reduction of edge placement errors. These requirements may exceed the capability of the current MBMW tools. Recently IMS announced the next generation MBMW tools to address this challenge. This paper will explore the effectiveness of the proposed improvements on addressing High-NA EUV mask patterning challenges.

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High-NA EUV lithography exposure tool: advantages and program progress

Cited by 34 publications

References 0 publications

EUV resist screening update: progress towards high-NA lithography

EUV resist screening update: progress towards high-NA lithography

Progress in EUV resist screening by interference lithography for high-NA lithography

Multibeam mask requirements for advanced EUV patterning

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