Progress in EUV resist screening by interference lithography for high-NA lithography

Allenet, Timothée; Vockenhuber, Michaela; Yeh, Chia-Kai; Santaclara, Jara G.; Lent-Protasova, Lidia van; Ekinci, Yasin

doi:10.1117/12.2600963

Cited by 9 publications

(8 citation statements)

References 11 publications

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“…Commercial metal oxide resists have already demonstrated industry leading resolution at sub-10 nm half pitch compared to CARs. − Moreover, they are better positioned than CAR resists in overcoming the RLS trade-off . To understand the origin of their superiority and fully exploit the potential of these compounds for EUV applications, the exposure chemistry should be closely examined.…”

Section: Introductionmentioning

confidence: 99%

Mechanistic Advantages of Organotin Molecular EUV Photoresists

Heidkamp

Needham

Wang

et al. 2022

ACS Appl. Mater. Interfaces

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The Extreme Ultraviolet(EUV)-induced radiation exposure chemistry in organotinoxo systems, represented by the archetypal [(R Sn) 12 O 14 (OH) 6 ](A) 2 cage, has been investigated with density functional theory. Upholding existing experimental evidence of Sn-C cleavage dominant chemistry, computations have revealed either electron attachment or ionization can single-handedly trigger tin-carbon bond cleavage, partially explaining the current EUV sensitivity advantage of metal oxide systems. We have revealed that tin atoms at dierent parts of the molecule react dierently to ionization and 1 electron attachment, and have identied such selectivity as a result of local coordination chemistry instead of the macro geometry of the molecule. An ionizationdeprotonation pathway has also been identied to explain observed evolution of anion conjugate acid upon exposure and anion mass dependence in resist sensitivity.

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Section: Introductionmentioning

confidence: 99%

Mechanistic Advantages of Organotin Molecular EUV Photoresists

Heidkamp

Needham

Wang

et al. 2022

ACS Appl. Mater. Interfaces

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“…(4) The decarboxylation efficiency was higher in molecular structures without additional methyl groups. (5) The rate constants of the initial reaction process were not correlated with the decarboxylation efficiency.…”

Section: Discussionmentioning

confidence: 99%

“…2,3) However, resist materials for use in high-NA tools have not yet been developed. 4,5) Chemically amplified resists, 6) which are currently the standard resists, have defects such as line edge roughness (LER), 7,8) bridging, and pinching 9,10) and inadequate etching resistance. 11) The following are possible causes of these defects.…”

Section: Introductionmentioning

confidence: 99%

Decarboxylation efficiency of carboxylic acids as ligands of metal oxide nanocluster resists upon γ-ray irradiation

Otsuka

Muroya

Ikeda

et al. 2022

Jpn. J. Appl. Phys.

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Metal oxide nanocluster resists have recently attracted considerable attention for use in extreme ultraviolet (EUV) lithography. To obtain sophisticated guidelines for material design, it is necessary to understand well the radiation-induced chemical reaction scheme including the insolubilization mechanism. In this study, the production of CO2, which is considered to be one of the end products of treatment with an ionizing radiation, was investigated for eight types of carboxylic acid under various conditions using -rays (60Co) as a radiation source. The amount of CO2 produced was measured by gas chromatography (GC). GCO2 (/100 eV), which indicates decarboxylation efficiency, was evaluated. CO2 was generated through electron addition, hole transfer, and hydroxyl radical addition to the molecular and ionic forms of carboxylic acids. The dependences of GCO2 on reaction partners were clarified. The dependences of GCO2 on the molecular structure and dissociative state of carboxylic acids were also clarified.

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“…The present work is carried out in collaboration between ASML and PSI [7][8][9] . This joint-research program is dedicated to supporting EUV material vendors in the development of their novel materials by using the EUV-IL and resist metrology research facilities at PSI.…”

Section: Psi-asml Resist Screening Program Targetsmentioning

confidence: 99%

EUV resist screening update: progress towards high-NA lithography

Allenet

Vockenhuber

Chen

et al. 2022

Advances in Patterning Materials and Processes XXXIX

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The improvement of EUV photoresists is a key enabler for the deployment of High-NA EUV lithography and future technology nodes. Research in this field is supported by a joint research program between PSI and ASML. This program is dedicated to supporting the EUVL community with the development of materials by carrying out resist screening experiments with the EUV interference lithography tool at PSI, with an emphasis on resolution improvement towards reaching High-NA EUV scanner specifications. The tool enables high-resolution patterning without limitations in terms of chemical outgassing or contamination and is, therefore, an effective method for the testing of novel EUV photoresists. In this work, we consider the progress monitored in the second half of 2021. We describe the exposure tool as well as the updates made to the resist characterization metrology implemented at PSI. Resist performances are quantified with regards to resolution, linewidth roughness, and sensitivity. We show an overview of the current development status through a comparative study of different resist platforms. Recent results show chemically amplified resists (CAR) and non-CAR printing 12 nm and 11 nm lines/spaces features, respectively. Limitations of each platform are displayed and general progress and perspectives are discussed to lead the way to higher resolution results.

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Progress in EUV resist screening by interference lithography for high-NA lithography

Cited by 9 publications

References 11 publications

Mechanistic Advantages of Organotin Molecular EUV Photoresists

Mechanistic Advantages of Organotin Molecular EUV Photoresists

Decarboxylation efficiency of carboxylic acids as ligands of metal oxide nanocluster resists upon γ-ray irradiation

EUV resist screening update: progress towards high-NA lithography

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