Multibeam mask requirements for advanced EUV patterning

Chandramouli, Mahesh; Liu, Bin; Alberti, Zachary; Abboud, Frank E.; Hochleitner, G.; Wroczewski, Witold; Kühn, Stefan; Klein, Claude; Platzgummer, Elmar

doi:10.1117/12.2645895

Cited by 2 publications

(1 citation statement)

References 14 publications

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“…For given exposure dose and default image field settings, the smaller beam showed >17% reduction in local placement errors as shown in Figure 10. Significantly larger improvement in local pattern placement accuracy was achieved with different writing mode 7 .…”

Section: Local Pattern Placementmentioning

confidence: 97%

Multi-beam patterning technology and mask making beyond 5nm

Shamoun¹,

Alberti²,

Bucay³

et al. 2023

Novel Patterning Technologies 2023

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The wafer manufacturing industry has increased pattern complexity of the main feature and sub-resolution assist feature (SRAF) required for improving the EUV lithography process window and enabling the leading-edge technology nodes. In parallel, Inverse Lithography Technology (ILT) and its requirements of curvilinear data structure has gained momentum in recent years, putting the pressure on mask makers, in particular the mask writer. To fulfill the curvilinear feature requirements of high pattern resolution and large data volume, the mask writer needs to develop innovative techniques and update its error compensation strategies. In this paper, we will investigate the pattern resolution, local critical dimension uniformity (LCDU), and line edge roughness (LER) and explore the projected improvements in multi-beam writer technology and highlight its capability against EUV lithography requirements. We will also investigate the role of resist and process on these critical mask metrics to illustrate the overall performance against wafer requirements. EUV mask exposure tests were conducted at Intel Mask Operation (IMO) on a MBMW201 multi-beam writer to study the effects of writing beam diameter and associate blurs, mask exposure dose, and photoresist on pattern resolution, LCDU, and LER. An analytical model was also used to predict the trend and determine the dependency of these lithographic metrics on the writer exposure conditions.

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Section: Local Pattern Placementmentioning

confidence: 97%

Multi-beam patterning technology and mask making beyond 5nm

Shamoun¹,

Alberti²,

Bucay³

et al. 2023

Novel Patterning Technologies 2023

View full text Add to dashboard Cite

show abstract

Recent progress and future of electron multi-beam mask writer

Yasuda¹,

Nomura²,

Matsumoto³

et al. 2023

Jpn. J. Appl. Phys.

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In this paper, development of NuFlare Technology’s multi-beam (MB) mask writing system MBM-2000 series is reviewed, and future plans for the MBM series are discussed. The MB mask writing systems were designed on the basis of unique concepts suitable for high-volume production of leading-edge masks, i.e., high beam current density, a reliable beam blanking aperture array (BAA) system with a 50-keV single-stage acceleration optics, high-speed inline pixel-level dose correction, and a distinctive hardware system for charging effect reduction. The latest MB mask writing system, MBM-2000PLUS, achieves a high throughput of 8.7 hours in a 104×130 mm2 writing area for a 150 μC/cm2 resist thanks to a high beam current density of 3.2 A/cm2. In addition, a global position accuracy of 1.2 nm, a local position accuracy of 0.5 nm, and a local critical dimension uniformity of 0.61 nm are achieved. The BAA system has shown long-term stable operation for more than one year. The high productivity and writing accuracy realized by NuFlare Technology’s concepts will contribute to further miniaturization of semiconductors.

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Multibeam mask requirements for advanced EUV patterning

Cited by 2 publications

References 14 publications

Multi-beam patterning technology and mask making beyond 5nm

Multi-beam patterning technology and mask making beyond 5nm

Recent progress and future of electron multi-beam mask writer

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