Recent progress and future of electron multi-beam mask writer

Abstract

In this paper, development of NuFlare Technology’s multi-beam (MB) mask writing system MBM-2000 series is reviewed, and future plans for the MBM series are discussed. The MB mask writing systems were designed on the basis of unique concepts suitable for high-volume production of leading-edge masks, i.e., high beam current density, a reliable beam blanking aperture array (BAA) system with a 50-keV single-stage acceleration optics, high-speed inline pixel-level dose correction, and a distinctive hardware system for charging effect reduction. The latest MB mask writing system, MBM-2000PLUS, achieves a high throughput of 8.7 hours in a 104×130 mm2 writing area for a 150 μC/cm2 resist thanks to a high beam current density of 3.2 A/cm2. In addition, a global position accuracy of 1.2 nm, a local position accuracy of 0.5 nm, and a local critical dimension uniformity of 0.61 nm are achieved. The BAA system has shown long-term stable operation for more than one year. The high productivity and writing accuracy realized by NuFlare Technology’s concepts will contribute to further miniaturization of semiconductors.

Multi-beam mask writer MBM-3000 for next generation EUV mask production

“…Both this local CD uniformity and the local position accuracy of 0.4 nm (3) shown in Fig. 3 are better than those of the MBM-2000PLUS [2] . Fig.…”

“…We have developed the multi-beam mask writer MBM-3000 for the N2. It is the successor of the MBM-2000 and MBM-2000PLUS [2] , which were developed for the N3 and are currently used in mask production at our customers' sites. The MBM-3000 is designed to enhance both patterning resolution and writing speed, by equipping 12-nm beamlets and a powerful cathode that brings out a beam current density of 3.6 A/cm 2 .…”

Multi-beam mask writing opens up new fields of application, including curvilinear mask pattern for high numerical aperture extreme ultraviolet lithography

“…At first glance, the simpler approach of concept A seems appealing and beneficial due its simplicity, as claimed recently. 6 However, concept B has significant advantages with regards to the longevity of APS lifetime and general optics performance.…”

“…Although earlier tools following concept A could not deal with the radiation damage of the BLC electronics, recently lifetimes of 1 year were reported using mitigation strategies that limit the impact by radiation 6 . Reducing the amount of ionizing radiation seems to be managed, but any remaining radiation can create electronics damage, leading to a slow but continuous APS degradation over time and thus impacting the write-performance quality such as the critical dimension uniformity (CDU) and pattern fidelity.…”

Multi-beam mask writing opens up new fields of application

“…While earlier tools following Concept A could not deal with the radiation damage of the BLC electronics, recently NFT reported to achieve lifetimes of one year using mitigation strategies that limit the impact by radiation [6]. Reducing the amount of ionizing radiation seems to be managed, but any remaining radiation can bare a risk to electronics damage leading to slow but continuous APS degradation over time, and thus impact write-performance quality such as CDU and pattern fidelity.…”