Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs

Najeeb-ud-Din,; Dunga, Mohan; Kumar, Arvind; Rao, V. Ramgopal; Vasi, J.

doi:10.1109/icsict.2001.981564

Cited by 7 publications

(3 citation statements)

References 8 publications

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“…The floating-body effects such as kink and parasitic bipolar junction transistor (pBJT) limit the performance of SOI in analogue circuits. The absence of the kink and lower inherent parasitic bipolar junction transistor gain of SH SOI has been reported elsewhere in detail [6,7].…”

Section: Introductionmentioning

confidence: 57%

Design of a 0.1 µm single halo (SH) thin film silicon-on-insulator (SOI) MOSFET for analogue applications

Hakim¹,

Rao²,

Vasi³

2005

Semicond. Sci. Technol.

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In this paper, we propose a design of a 0.1 µm single halo (SH) thin film silicon-on-insulator (SOI) nMOSFET device for analogue and mixed signal applications. The single halo structure has a high pocket impurity concentration near the source end of the channel and low impurity concentration in the rest of the channel. The design methodology is based upon the improvement in the short-channel effects (SCE) and suppression of the kink. The device is optimized for various film thicknesses and different peak dopings. The position of the peak doping near the source is also an important parameter and hence, also needs to be optimized. The SH devices show better V th-L roll-off, low drain induced barrier lowering, higher breakdown voltages and lower floating-body effects. The experimental results have shown the superior analogue performance of SH SOI MOSFETs. Also, the low drain junction capacitance as a result of low impurity concentration near the drain region is beneficial for improved circuit performance.

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Section: Introductionmentioning

confidence: 57%

Design of a 0.1 µm single halo (SH) thin film silicon-on-insulator (SOI) MOSFET for analogue applications

Hakim¹,

Rao²,

Vasi³

2005

Semicond. Sci. Technol.

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“…Single-halo MOSFET structures have been introduced for bulk substrates in Ref. [8] as well as SOI MOSFETs in Ref. [9] to adjust threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional subthreshold current model for dual-material gate SOI nMOSFETs with single halo

Luan

Liu

Jia

et al. 2008

Front. Electr. Electron. Eng. China

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A two-dimensional (2D) model for the subthreshold current in the dual-material gate (DMG) siliconon-insulator (SOI) MOSFET with a single halo is presented. The model considers single halo doping in the channel near the source and a dual-material gate to derive the channel potential using the explicit solution of the 2D Poisson's equation. Together with the conventional driftdiffusion theory, this results in the development of a subthreshold current model for the novel structure. Model verification is carried out using the 2D device simulator ISE. Excellent agreement is obtained between the calculations and the simulated results of the model.

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“…We have shown that SH MOSFETs have higher small signal g m and R o as compared to CON devices. The other advantages of SH over CON SOI MOSFETs, like absence of kink, lower inherent parasitic bipolar junction transistor (pBJT) gain have also been reported elsewhere in detail [10][11].…”

Section: Introductionmentioning

confidence: 99%

Small signal characteristics of thin film single halo SOI MOSFET for mixed mode applications

Hakim

Rao

Vasi

16th International Conference on VLSI Design, 2003. Proceedings.

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Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs

Cited by 7 publications

References 8 publications

Design of a 0.1 µm single halo (SH) thin film silicon-on-insulator (SOI) MOSFET for analogue applications

Design of a 0.1 µm single halo (SH) thin film silicon-on-insulator (SOI) MOSFET for analogue applications

Two-dimensional subthreshold current model for dual-material gate SOI nMOSFETs with single halo

Small signal characteristics of thin film single halo SOI MOSFET for mixed mode applications

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