Abstract:In this paper, we propose a design of a 0.1 µm single halo (SH) thin film silicon-on-insulator (SOI) nMOSFET device for analogue and mixed signal applications. The single halo structure has a high pocket impurity concentration near the source end of the channel and low impurity concentration in the rest of the channel. The design methodology is based upon the improvement in the short-channel effects (SCE) and suppression of the kink. The device is optimized for various film thicknesses and different peak dopin… Show more
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