Abstract:A two-dimensional (2D) model for the subthreshold current in the dual-material gate (DMG) siliconon-insulator (SOI) MOSFET with a single halo is presented. The model considers single halo doping in the channel near the source and a dual-material gate to derive the channel potential using the explicit solution of the 2D Poisson's equation. Together with the conventional driftdiffusion theory, this results in the development of a subthreshold current model for the novel structure. Model verification is carried o… Show more
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