AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications

Malik, P.; Gupta, R. S.; Chaujar, Rishu; Gupta, Mridula

doi:10.1016/j.microrel.2011.07.070

Cited by 29 publications

(9 citation statements)

References 20 publications

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“…AlGaN/GaN high electron mobility transistors (HEMTs) have been an area of increasing research particularly in high frequency and high power applications. Communications technology seem to be the most common place for these devices, due to their excellent performance in the GHz range [1][2][3][4][5]. To achieve high frequency operation, high transconductance is the key.…”

Section: Introductionmentioning

confidence: 99%

Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

Pinchbeck

Lee

Jiang

et al. 2020

J. Phys. D: Appl. Phys.

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AlGaN/GaN high electron mobility transistors with a range of dual metal gate (DMG) lengths have been fabricated and studied. An improvement in transconductance up to 9% has been measured in the DMG devices in comparison to the conventional single metal gate devices. This is attributed to the distribution of the electric field under the gate region as a result of two gate metals. The drain induced barrier lowering is also suppressed using the sub-µm DMG devices, with a drain induced barrier lowering decrease of around 50% due to a potential shielding effect in the two-dimensional electron gas channel.

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Section: Introductionmentioning

confidence: 99%

Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

Pinchbeck

Lee

Jiang

et al. 2020

J. Phys. D: Appl. Phys.

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“…The calculations of these linearity and intermodulation distortion FOMs have been investigated on the basis of TCAD results mathematical Equations 1-4. 42,43 VIP2 = 4 × g m1 g m2 [1] VIP3 = 24 g m1 g m3…”

Section: Assessment Of Linearity Performance and Intermodulation Dist...mentioning

confidence: 99%

“…The Stern's/Rollett's stability factor (K) is standardized for the stability analysis of LNAs in high frequency applications. 42,43 Here, we have calculated the value of factor K on the basis of S parameter by using Equation 5. Moreover, the value of parameter is considered as per Equation 6and the corresponding plot of stability factor and parameter is shown in Figs.…”

Section: Stern High-frequency Stability Factor (K)mentioning

confidence: 99%

“…Where, = S 11 S 22 − S 12 S 21 [6] Further, the maximum unilateral power gain (G U ) and transducer power gain (G T ) is taken under study. 42,43 If the signal flow in the reverse direction is less, there unilateral network exists and the gain G U is calculated as per Equation 7. Whereas, transducer power gain G T is specified as the ratio of output power delivered to a load by a source and the maximum power available from the source and it is calculated form Equation 8.…”

Section: Stern High-frequency Stability Factor (K)mentioning

confidence: 99%

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Linearity Distortion Assessment and Small-Signal Behavior of Nano-Scaled SOI MOSFET for Terahertz Applications

Srivastava

Mishra

2019

ECS J. Solid State Sci. Technol.

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Fully-Depleted Silicon-on-Insulator (FD SOI) MOS technology has already been reported as a strong contender in nanoscale CMOS designs. This work presents the linearity-distortion assessment, small-signal and radio-frequency noise-behavior of dual-metal-insulated-gate (DMIG) source-engineered (SE) FD SOI MOSFET for terahertz (THz) applications. Here, linearity-distortion performance has been monitored on the basis of numerical calculations of transconductance and its higher-order derivatives along with the voltage-intercept points, and various parameters of intermodulation-distortion. This analysis also practices the guidelines of device design with least linearity-distortion in radio-frequency integrated-circuits based communication systems at 50 nm technology node. Further, the small-signal and RF noise-behavior have been examined on the basis of high-frequency scattering-parameters for the analysis of input/output reflection-coefficients (S11/S22), reverse/forward transmission-coefficients (S12/S21), Stern's-stability-factor (K), minimum noise-figure, noise-conductance and cross-correlation factor (). The analysed results affirm the ultimate reduction in reflection-coefficients and a significant increase in transmission-coefficients in case of DMIG FD SOI MOSFET at THz range as compared to existing MOS structures. Also, the analysis reveals the considerable reduction in various radio-frequency noise FOMs and thus represents the device efficacy in low-noise-amplifiers. All these studies have been carried out by performing numerical simulations over TCAD-ATLAS simulator from Silvaco along with quantum-mechanical-effect (QME) and Bohm-quantum-potential (BQP) models.

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“…In some cases, it may cause these amplifiers to oscillate. In digital switching circuits, the rise time and fall time of the digital signal greatly affect the maximum speeds achievable [29]. The intrinsic parasitic capacitances are extracted from small signal analysis after post processing operation of DC solution at an operating frequency of 1 MHz.…”

Section: Rf Performance Metrics Inquisitionmentioning

confidence: 99%

Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

2015

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In this paper, we explore the quantitative investigation of the high-frequency performance of gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) MOSFET and compared with silicon nanowire MOSFET(SiNW MOSFET) using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOS-FET over SiNW MOSFET in terms of transconductance (g m ), cut-off frequency ( f T ), maximum oscillator frequency ( f MAX ), power gains (Gma, G MT ) parasitic capacitances, stern's stability factor and intrinsic delay. Further, using three-dimensional device simulations, we have also examined the efficacy of parameter variations in terms of oxide thickness, radius of silicon nanowire, channel length and gate metal workfunction engineering on RF/microwave figure of merits of GEWE-SiNW MOSFET. Simulation result reveals significant enhancement in f T and f MAX ; and a reduction in switching time in GEWE-SiNW MOSFET due to alleviated short channel effects, improved drain current and smaller parasitic capacitance, thus providing detailed knowledge about the device's RF performance at such aggressively scaled dimensions.

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AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications

Cited by 29 publications

References 20 publications

Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

Linearity Distortion Assessment and Small-Signal Behavior of Nano-Scaled SOI MOSFET for Terahertz Applications

Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

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