Characterization of carrier generation in enhancement-mode SOI MOSFET's

Ioannou, D.E.; Cristoloveanu, S.; Mukherjee, Moumita; Mazhari, B.

doi:10.1109/55.62972

Cited by 87 publications

(39 citation statements)

References 6 publications

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“…An analysis of the drain current (I D ) transients after switching "on" or "off" the front gate voltage, has been used to assess the quality of the starting material, process-induced defects or contamination [6][7][8]. As there is no substrate current to quickly adjust the majority carrier density, equilibrium has to be reached through generationrecombination processes.…”

Section: Floating Body Behaviour Of Finfetsmentioning

confidence: 99%

Reliability performance characterization of SOI FinFETs

Claeys

Put

Rafı́

et al. 2009

2009 2nd International Workshop on Electron Devices and Semiconductor Technology

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FinFET devices are explicitly mentioned in the ITRS roadmap and have a good potential for scaling CMOS to 22 nm and below. Some physical characterization and reliability aspects of these devices are reviewed. Attention is given to transient floating body effects and low frequency noise, which may yield information on the materials' characteristics like carrier recombination lifetime or interface and oxide trap density. These methods can be useful to study the performance of these components under harsh operation conditions of low or high temperature, or at high bias voltages.

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Section: Floating Body Behaviour Of Finfetsmentioning

confidence: 99%

Reliability performance characterization of SOI FinFETs

Claeys

Put

Rafı́

et al. 2009

2009 2nd International Workshop on Electron Devices and Semiconductor Technology

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“…An analysis of the drain current (ID) transients after the switching "on" or "off" of the front gate voltage, ECS Transactions, 9 (1) 281-294 (2007) has been used as a tool for assessing the quality of the starting material, process-induced defects or contamination (13)(14)(15). As there is no substrate current to quickly adjust the majority carrier density, equilibrium has to be reached through generation-recombination processes.…”

Section: Floating Body and Transient Effectsmentioning

confidence: 99%

Physical Characterization and Reliability Aspects of MuGFETs

Claeys

Simoen²,

Rafi

et al. 2007

ECS Trans.

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Multi-gate devices are explicitly mentioned in the ITRS roadmap and have a good potential for scaling to the 32 nm and below technology nodes. Worldwide much attention is given to FinFET and MuGFET device architectures. This paper reviews some physical characterization and reliability aspects of such devices. Attention is given to aspects such as transient floating body effects, their performance at both high and low temperatures, gate coupling effects and their low frequency noise behavior. In addition, their potential radiation hardness in view of space applications is outlined.

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“…The carrier generation lifetime is one of the important parameters to evaluate the crystal quality and the performance of the SOI MOS devices, because parameters like the leakage current in pn junctions, the dynamic random access memory (DRAMs) refresh time, and the gain of the parasitic bipolar transistors are dependent on it (4).…”

Section: Introductionmentioning

confidence: 99%

Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs

Galeti

Martino²,

Simoen³

et al. 2007

ECS Trans.

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This work reports on an improved model to determine the hole generation lifetime in Double Gate SOI nMOSFETs. This improved model is based on the drain current switch-off transient for partially depleted SOI devices and it is dependent on the silicon thickness. This model also considers the influence of the halo implanted region and the channel length reduction. The obtained results through this new technique with double gate devices were compared with experimental measurements and two-dimensional numerical simulations of the single gate devices showing a good agreement.

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Characterization of carrier generation in enhancement-mode SOI MOSFET's

Cited by 87 publications

References 6 publications

Reliability performance characterization of SOI FinFETs

Reliability performance characterization of SOI FinFETs

Physical Characterization and Reliability Aspects of MuGFETs

Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs

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