Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs

Abstract

This work reports on an improved model to determine the hole generation lifetime in Double Gate SOI nMOSFETs. This improved model is based on the drain current switch-off transient for partially depleted SOI devices and it is dependent on the silicon thickness. This model also considers the influence of the halo implanted region and the channel length reduction. The obtained results through this new technique with double gate devices were compared with experimental measurements and two-dimensional numerical simulations of the single gate devices showing a good agreement.

Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs

“…The source/drain (N S,D ), halo (N h ) and channel (N a ) doping concentrations were kept the same as for the single-gate structure. Firstly, the SG twodimensional simulations were validated by the experimental data, and from these the DG simulations were generated which were then compared with the proposed model [26]. Figure 9 describes, before and after the application of the negative voltage step, the body potential behavior across the silicon layer depth, for single-and double-gate devices with two different channel lengths.…”

“…In order to consider this phenomenon in the improved modeling, first the impact of the laterally nonuniform doping density along the channel, due to the presence of the halo implanted region, is included, while neglecting the contribution of the charge controlled by the source/drain junctions. The gate leakage current influence on the transient time was also analyzed for V G,high and V G,low , and it was observed that the gate current does not introduce changes in the transient time values for the gate bias used [20].…”

(Invited) Transistor-Based Extraction of Carrier Lifetime and Interface Traps Densities in Silicon-on-Insulator Materials

“…Several authors have reported generation lifetime measurement methods using SOI MOSFETs (1)(2). Floating body Partially Depleted (PD) SOI MOSFETs exhibit drain current transients (3)(4) and these can be used to determine the generation lifetime, W g , without extensive numerical analysis (5,6), in short channel (7) and double gate devices (8).…”