Physical Characterization and Reliability Aspects of MuGFETs

Abstract

Multi-gate devices are explicitly mentioned in the ITRS roadmap and have a good potential for scaling to the 32 nm and below technology nodes. Worldwide much attention is given to FinFET and MuGFET device architectures. This paper reviews some physical characterization and reliability aspects of such devices. Attention is given to aspects such as transient floating body effects, their performance at both high and low temperatures, gate coupling effects and their low frequency noise behavior. In addition, their potential radiation hardness in view of space applications is outlined.

Cross-Section Features Influence on Surrounding MuGFETs

“…In order to keep the continuous decrease in the MOS transistors dimensions, the academic community is studying the applicability of a multiple gate structure. The multiple gate architecture has presented a better behavior when compared to the single gate one (4,5). Among many observed advantages, it is possible to mention an increase in the transconductance, a better short channel effect and an almost ideal subthreshold slope.…”