“…Barium strontium titanate, Ba 1Àx Sr x TiO 3 (BST), has attracted a great deal of attention for use in dynamic random access memories (DRAM) due to its relatively high dielectric constant, low leakage current density, high dielectric breakdown strength, and low dissipation factor [1,2]. On the other hand, the nonlinearity of its dielectric properties with respect to applied DC voltage makes it attractive for tunable microwave devices [3,4].…”