Electrical properties of W-doped (Ba0.5Sr0.5)TiO3 thin films

Liang, Chun-Sheng; Wu, Jenn‐Ming

doi:10.1016/j.jcrysgro.2004.10.028

Cited by 35 publications

(2 citation statements)

References 15 publications

(14 reference statements)

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“…This observation was apparently contradicted to the Vegard's law 25 because the ionic radii of the titanium ion (0.61Å) is smaller than the niobium ion (0.65 Å), and hence, the unit cell volume should shrink with the substitution of titanium for niobium at B‐site of the perovskite lattice. The possible reason could be due to the occurrence of large amount of oxygen vacancies 26,27 when titanium ions substituted B‐sites of the perovskite lattice to maintain the electrical neutrality of the system. These oxygen vacancies might affect the nearest neighbor distance by reducing the Coulomb attractive force between the cation and anion atoms, resulting in increased lattice parameter and unit cell volume 26 …”

Section: Resultsmentioning

confidence: 99%

Titanium Diffusion into (K_0.5Na_0.5)NbO₃ Thin Films Deposited on Pt/Ti/SiO₂/Si Substrates and Corresponding Effects

Goh

Yao

Chen

2009

Journal of the American Ceramic Society

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Lead-free (K 0.5 Na 0.5 )NbO 3 (KNN) thin films were prepared on Pt/Ti/SiO 2 /Si substrates by a sol-gel processing method, and titanium diffusion from the substrates into the KNN films under different thermal treatment conditions were investigated by the secondary ion mass spectroscopy depth profile and X-ray photoelectron spectroscopy surface analysis. Titanium diffusion was evident in all the KNN thin films, which was further aggravated not only by increasing the annealing temperature, but also surprisingly by higher ramping rate attributed to the resulting larger grain boundaries. The pronounced effects of the titanium diffusion and the resulting substitution of Ti 41 for Nb 51 with different valence states on the composition, structure, and electrical properties of the KNN thin films are analyzed and discussed. The results showed that the Ti diffusion from the substrate played a crucial role in affecting the structure and electrical properties of the ferroelectric KNN thin films deposited on Pt/Ti/SiO 2 /Si substrate.

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Section: Resultsmentioning

confidence: 99%

Titanium Diffusion into (K_0.5Na_0.5)NbO₃ Thin Films Deposited on Pt/Ti/SiO₂/Si Substrates and Corresponding Effects

Goh

Yao

Chen

2009

Journal of the American Ceramic Society

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“…Because the electrons resulting from the generation of oxygen vacancies can hop between different titanium ions and provide a mechanism for dielectric losses, the compensation for the oxygen vacancy with the correct amount of acceptor dopants helps to lower the loss tangent [19]. Higher valence substitution, in particular W 6+ ion [20], being thus a donor, suppresses the leakage current and resistance degradation of titanate perovskites owing to their ability of suppressing the oxygen vacancies.…”

Section: Introductionmentioning

confidence: 99%

Dielectric, Pyroelectric and Thermally Stimulated Depolarization Current Investigations on (Ba, Sr)TiO₃Ceramics with Bi₂O₃Additive

et al. 2007

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The Ba 1−x Sr x TiO 3 materials have received increased attention as one of the most important materials for electroceramic components, such as high dielectric ceramic capacitors, tunable phase shifters and PTCR. In this paper the effect of 0.5; 1; 1.5; and 2 mole% of Bi 2 O 3 addition on microstructure, structure, dielectric properties (i.e., dielectric constant ε , and dielectric loss factor tan δ), as well as pyroelectric and thermally stimulated depolarization currents (TSDC) of (Ba 0.8 Sr 0.2 )TiO 3 ceramics have been investigated. The distinct correlation between Bi 2 O 3 content, wide maxima in TSDC, anomalies in ε (T ) and tan δ(T ) characteristics occurring within the range of the paraelectric phase was confirmed. Changes of electric conductivity and Seebeck's coefficient, caused by Bi 2 O 3 -additives, were also studied.

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High‐permittivity and conduction mechanism of La‐doped Ba_0.67Sr_0.33TiO₃ ceramics

Liu

et al. 2012

Physica Status Solidi (b)

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High permittivity La‐doped Ba0.67Sr0.33TiO3 ceramics (BSTL) with cubic perovskite structure, i.e., BaxSr1−xTiO3 (BST) + x at.% La, where x = 0–1, were prepared by conventional ceramic processing techniques. Dielectric characteristics, X‐ray diffraction, scanning electron microscopy (SEM), and J–V (leakage current density–voltage) behaviors were measured. Doping with the La in the BST host lattice resulted in a large‐grained (1–3 µm) and fine‐grained (0.3–1 µm) microstructure, marked raising, and broadening of the Curie peak. The temperature of dielectric peak (Tm) at 10 kHz decreased rapidly with a doping concentration of <0.7 at.% La. By means of doping with La, high dielectric constant ceramics (BSTL: 0.2 ≤ x ≤ 0.7) with permittivity at room temperature (εRT) > 110 000 at 10 kHz have been achieved. The plots of leakage current density versus voltage show the different electrical conduction mechanism in different voltage ranges.

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Electrical properties of W-doped (Ba0.5Sr0.5)TiO3 thin films

Cited by 35 publications

References 15 publications

Titanium Diffusion into (K_0.5Na_0.5)NbO₃ Thin Films Deposited on Pt/Ti/SiO₂/Si Substrates and Corresponding Effects

Titanium Diffusion into (K_0.5Na_0.5)NbO₃ Thin Films Deposited on Pt/Ti/SiO₂/Si Substrates and Corresponding Effects

Dielectric, Pyroelectric and Thermally Stimulated Depolarization Current Investigations on (Ba, Sr)TiO₃Ceramics with Bi₂O₃Additive

High‐permittivity and conduction mechanism of La‐doped Ba_0.67Sr_0.33TiO₃ ceramics

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Electrical properties of W-doped (Ba0.5Sr0.5)TiO3 thin films

Cited by 35 publications

References 15 publications

Titanium Diffusion into (K0.5Na0.5)NbO3 Thin Films Deposited on Pt/Ti/SiO2/Si Substrates and Corresponding Effects

Titanium Diffusion into (K0.5Na0.5)NbO3 Thin Films Deposited on Pt/Ti/SiO2/Si Substrates and Corresponding Effects

Dielectric, Pyroelectric and Thermally Stimulated Depolarization Current Investigations on (Ba, Sr)TiO3Ceramics with Bi2O3Additive

High‐permittivity and conduction mechanism of La‐doped Ba0.67Sr0.33TiO3 ceramics

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Titanium Diffusion into (K_0.5Na_0.5)NbO₃ Thin Films Deposited on Pt/Ti/SiO₂/Si Substrates and Corresponding Effects

Titanium Diffusion into (K_0.5Na_0.5)NbO₃ Thin Films Deposited on Pt/Ti/SiO₂/Si Substrates and Corresponding Effects

Dielectric, Pyroelectric and Thermally Stimulated Depolarization Current Investigations on (Ba, Sr)TiO₃Ceramics with Bi₂O₃Additive

High‐permittivity and conduction mechanism of La‐doped Ba_0.67Sr_0.33TiO₃ ceramics