The chemical composition and electrical properties were investigated for epitaxially crystallized (Ba0.5,Sr0.5)TiO3 (BST) films deposited on Pt/MgO and YBa2Cu3O7−x (YBCO)/MgO substrates by the laser ablation technique. Rutherford backscattering spectroscopy analysis shows that thin films on Pt/MgO have almost the same stoichiometric composition as the target material. Films deposited at 600 °C exhibited an excellent epitaxial growth, a dielectric constant of 430, and a dissipation factor of 0.02 at 10 kHz frequency. They have a charge storage density of 40 fC/μm2 at an applied electric field of 0.15 MV/cm. Leakage current density of BST thin films on Pt/MgO was smaller than on YBCO/MgO. Their leakage current density is about 0.8 μA/cm2 at an applied electric field of 0.15 MV/cm.
Abstract:We investigated the evolution of the strain fields around a fatigued crack tip between the steady-and overloaded-fatigue conditions using a nondestructive neutron diffraction technique. The two fatigued compact-tension specimens, with a different fatigue history but an identical applied stress intensity factor range, were used for the direct comparison of the crack tip stress/strain distributions during in situ loading. While strains behind the crack tip in the steady-fatigued specimen are irrelevant to increasing applied load, the strains behind the crack tip in the overloaded-fatigued specimen evolve significantly under loading, leading to a lower driving force of fatigue crack growth. The results reveal the overload retardation mechanism and the correlation between crack tip stress distribution and fatigue crack growth rate.
We report that industrially qualified SbTe chalcogenide film can be applied to programmable metallization cell memory switching device. To fabricate the switching device, Sb35Te65, Ag, and W (top electrode) were consequently sputtered on TiW (bottom electrode)/SiO2∕Si substrate, and Ag diffusion process was not added. During Ag sputtering, it is apparent that Ag is diffused into Sb35Te65 film to form Ag-doped Sb35Te65 solid electrolyte, and that some of the diffused Ag reacts with Te to form Ag–Te bond in the solid electrolyte.
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