Characterization and Modeling of 0.18μm Bulk CMOS Technology at Sub-Kelvin Temperature

Abstract

Previous cryogenic electronics studies are mostly at 77K and 4.2K. Cryogenic characterization of a 0.18µm standard bulk CMOS technology (operating voltages: 1.8V and 5V) is presented in this paper. Several NMOS and PMOS devices with different width to length ratios (W/L) were extensively tested and characterized under various bias conditions at sub-kelvin temperature. In addition to devices dc characteristics, the kink effect and current overshoot phenomenon are observed and discussed at sub-kelvin temperature. Especially, the current overshoot phenomenon in PMOS devices at sub-kelvin temperature is shown for the first time. The transfer characteristics of MOSFET devices (1.8V W/L = 10µm/10µm) at sub-kelvin temperature are modeled using the simplified EKV model. This work facilitates the CMOS circuits design and the integration of CMOS circuits with silicon-based quantum chips at extremely low temperatures.

Characterization and Modeling of Native MOSFETs Down to 4.2 K

“…The measured data include three characteristics, i.e., the output characteristics and the transfer characteristics in both the linear and the saturation regions. The root-mean-square (RMS) error is introduced to evaluate the fitness of the optimized parameters, which is given by [10]:…”

“…1(d), a step-up effect of a sudden I DS increase is observed. To explore the physical mechanism behind this effect, we performed measurements with different delay times [10] at specific temperatures, with results as shown in Fig. 2.…”

“…Because the EKV model is compact, concise, and accurate [10], we selected the EKV2.6 model as the basis and then modified the mobility calculation equations to describe the DC characteristics of native MOSFETs accurately over the range from room temperature to cryogenic temperatures. By simplifying the theoretical calculation equations and analyzing the previous measurement results in [17]- [21], we use the following formulas to describe the mobility of the Coulomb scattering (µ coul ), the surface roughness scattering (µ sr ), and the phonon scattering (µ ph ), respectively:…”

“…To date, characterization of MOSFETs technology in the range of 0.35 µm to 14 nm from 77 K to 50 mK has been widely reported [3], [6]- [10]. Most of these studies have This work was supported by the National Natural Science Foundation of China (Grants No.…”

Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications

“…Key advantages of operating at low temperatures include the better electrical performance of MOSFETs, with higher carrier drift velocity and so higher on-state drain current and transconductance, steeper subthreshold slope, lower leakage current [6,19]. Some works have studied bulk MOSFETs operation at cryogenic temperature emphasizing in particular kink behavior and freeze-out effects in those devices [7,15,[20][21][22][23][24]. Recently, outstanding characteristics have been demonstrated at 4.2 K on advanced CMOS technologies [19,[25][26][27], in particular for Fully Depleted Silicon-On-Insulator (FDSOI) [28][29][30][31][32].…”