Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K
Hao Su,
Yiyuan Cai,
Yuhuan Lin
et al.
Abstract:Threshold voltage behavior at cryogenic temperatures is dominated by interface traps. This mechanism leads to different trends of the threshold voltage for NMOS and PMOS toward deep cryogenic temperature. This study investigates threshold voltage (Vth) at cryogenic temperatures down to 10 mK for the first time, based on the recently developed physical charge‐based analytical threshold voltage model. To investigate the impact of devices on circuits at low temperatures, crucial MOSFET and analog design parameter… Show more
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