Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy

Tsen, G.K.O.; Sewell, Richard H.; Atanacio, Armand J.; Prince, Kathryn; Musca, Charles; Dell, John; Antoszewski, Jarek; Faraone, Lorenzo

doi:10.1109/commad.2006.4429878

Cited by 2 publications

(1 citation statement)

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“…3,4 Therefore, it is preferred to fabricate devices with the P + /p/N + arrangement. In situ As doping of HgCdTe has been demonstrated by molecular beam epitaxy (MBE) [5][6][7][8] ; however, controllable p-type doping at low concentration with long minority-carrier lifetime has been difficult to achieve. We take another approach by implementing implantation and deep diffusion techniques to achieve controllable low p-type doping.…”

Section: Introductionmentioning

confidence: 99%

Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes

Itsuno

Emelie

Phillips

et al. 2010

Journal of Elec Materi

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Controllable p-type doping at low concentrations is desired for multilayer HgCdTe samples in a P + /p/N + structure due to the promise of suppressing Auger processes, and ultimately reduced dark current for infrared detectors operating at a given temperature. In this study, a series of arsenic implantation and annealing experiments have been conducted to study diffusion at low Hg partial pressure with the goal of achieving effective control over dopant profiles at low concentration. Arsenic dopant profiles were measured by secondary ion mass spectroscopy (SIMS), where diffusion coefficients were extracted with values ranging between 3.35 9 10 À16 cm 2 s À1 and 6 9 10 À14 cm 2 s À1 . Arsenic diffusion coefficients were found to vary strongly with Hg partial pressure and HgCdTe alloy composition, corresponding to variations in Hg vacancy concentration.

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