Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes

Itsuno, Anne M.; Emelie, P.Y.; Phillips, Jamie; Velicu, S.; Grein, C. H.; Wijewarnasuriya, P. S.

doi:10.1007/s11664-010-1157-9

Cited by 11 publications

(5 citation statements)

References 20 publications

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“…The (111)B HgCdTe epitaxial layer was grown in a horizontal, near-a pressure Aixtron AIX-200 MOCVD system on a 2-inch (100) GaAs substrate We note that there are extensive experimental and theoretical analyses in the literature of the extraction and exclusion phenomenon [7][8][9][10][11][12][13]. Here, we focus on analyzing these two effects separately based on experimental and theoretical results for an LWIR HgCdTe photodiode.…”

Section: Methodsmentioning

confidence: 99%

“…As a consequence of the decrease in electron co (n) to almost zero, the hole concentration (p) decreases to the acceptor doping leading to a reduction in the Auger generation rate, and consequently dark c factor of 2ni/NA, where ni is the intrinsic carrier concentration, with an impr detectivity by (2ni/NA) 1/2 [6]. We note that there are extensive experimental and theoretical analyses i ture of the extraction and exclusion phenomenon [7][8][9][10][11][12][13]. Here, we focus o these two effects separately based on experimental and theoretical results f HgCdTe photodiode.…”

Section: Introductionmentioning

confidence: 94%

“…We note that there are extensive experimental and theoretical analyses in the literature of the extraction and exclusion phenomenon [ 7 , 8 , 9 , 10 , 11 , 12 , 13 ]. Here, we focus on analyzing these two effects separately based on experimental and theoretical results for an LWIR HgCdTe photodiode.…”

Section: Introductionmentioning

confidence: 99%

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Non-Equilibrium Long-Wave Infrared HgCdTe Photodiodes: How the Exclusion and Extraction Junctions Work Separately

Kopytko,

Majkowycz,

Sobieski

et al. 2024

Materials

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The cooling requirement for long-wave infrared detectors still creates significant limitations to their functionality. The phenomenon of minority-carrier exclusion and extraction in narrow-gap semiconductors has been intensively studied for over three decades and used to increase the operating temperatures of devices. Decreasing free carrier concentrations below equilibrium values by a stationary non-equilibrium depletion of the device absorber leads to a suppression of Auger generation. In this paper, we focus on analyzing exclusion and extraction effects separately, based on experimental and theoretical results for a HgCdTe photodiode. To carry out an experiment, the n+-P+-π-N+ heterostructure was grown by metal organic chemical vapor deposition on CdTe-buffered GaAs substrate. In order to separate the extraction and exclusive junctions, three different devices were evaluated: (1) a detector etched through the entire n+-P+-π-N+ heterostructure, (2) a detector made of the P+-π photoconductive junction and (3) a detector made of the π-N+ photodiode junction. For each device, the dark current density–voltage characteristics were measured at a high-temperature range, from 195 K to 300 K. Next, the carrier concentration distribution across the entire heterostructure and individual junctions was calculated using the APSYS simulation program. It was shown that when the n+-P+-π-N+ photodiode is reverse biased, the electron concentration in the π absorber drops below its thermal equilibrium value, due to the exclusion effect at the P+-π junction and the extraction effect at the π-N+ junction. To maintain the charge neutrality, the hole concentration is also reduced below the equilibrium value and reaches the absorber doping level (NA), leading to the Auger generation rate’s reduction by a factor of 2ni/NA, where ni is the intrinsic carrier concentration. Our experiment conducted for three separate detectors showed that the exclusion P+-π photoconductive junction has the most significant effect on the Auger suppression—the majority of the hole concentration drops to the doping level not only at the P+-π interface but also deep inside the π absorber.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 94%

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Non-Equilibrium Long-Wave Infrared HgCdTe Photodiodes: How the Exclusion and Extraction Junctions Work Separately

Kopytko,

Majkowycz,

Sobieski

et al. 2024

Materials

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“…Several literature studies have been published on the issues surrounding Auger-suppressed HgCdTe photodiodes [ 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ]. Among other things, the numerical modeling of predicted parameters [ 10 , 11 ], engineering steps (aimed at optimizing the photodiode architecture [ 12 ] and noise [ 13 ]), and time response studies (which have shown that the highest detectivity is obtained close to the negative resistance conditions at the expense of a long time constant [ 14 , 15 , 16 ]) were performed.…”

Section: Introductionmentioning

confidence: 99%

Defect Analysis in a Long-Wave Infrared HgCdTe Auger-Suppressed Photodiode

Kopytko,

Majkowycz,

Murawski

et al. 2024

Sensors

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Deep defects in the long-wave infrared (LWIR) HgCdTe heterostructure photodiode were measured via deep-level transient spectroscopy (DLTS) and photoluminescence (PL). The n+-P+-π-N+ photodiode structure was grown by following the metal–organic chemical vapor deposition (MOCVD) technique on a GaAs substrate. DLTS has revealed two defects: one electron trap with an activation energy value of 252 meV below the conduction band edge, located in the low n-type-doped transient layer at the π-N+ interface, and a second hole trap with an activation energy value of 89 meV above the valence band edge, located in the π absorber. The latter was interpreted as an isolated point defect, most probably associated with mercury vacancies (VHg). Numerical calculations applied to the experimental data showed that this VHg hole trap is the main cause of increased dark currents in the LWIR photodiode. The determined specific parameters of this trap were the capture cross-section for the holes of σp = 10−16–4 × 10−15 cm2 and the trap concentration of NT = 3–4 × 1014 cm−3. PL measurements confirmed that the trap lies approximately 83–89 meV above the valence band edge and its location.

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“…For that reason MOCVD growth seems to be more attractive because it allows obtaining in situ both donor and acceptor doping [16,17]. However, low p-type doping levels in the absorber region usually require metal vacancies annihilation using two-zone annealing in sealed quartz ampoules at temperatures over 300 • C after growth process in both MBE [18] and MOCVD [19,20] systems. Recently, improved performance of HgCdTe uncooled photodiodes grown by MOCVD without post growth annealing procedure has been reported in [21].…”

Section: Introductionmentioning

confidence: 99%

MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors

Madejczyk

Gawron

Martyniuk

et al. 2013

Semicond. Sci. Technol.

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The authors report on advanced metalorganic chemical vapor deposition (MOCVD) grown HgCdTe device structure for an ambient temperature long wavelength infrared radiation (LWIR) detector application. MOCVD technology with a wide range of composition and donor/acceptor doping and without post grown annealing seems to be an excellent tool for HgCdTe heterostructure epitaxial growth structure. The N + /G/π /G/P + /G/n + (where G denotes graded interface region) HgCdTe photovoltaic device concept of a specific barrier bandgap architecture integrated with Auger-suppression is a good solution for high operating temperature (HOT) infrared detectors. Selected problems of photodiode designing are indicated. Theoretical modelling using APSYS platform supports design and better understanding of the carrier transport mechanism in the photodiode structures. SIMS profiles allowed comparing projected and obtained structures and revealed diffusion processes in the structures. The negative differential resistance, clearly visible on current-voltage characteristics, evidences for Auger-suppression due to exclusion and extraction phenomena. It is shown that the thickness and arsenic doping of the active region influence the reverse bias dark current minimum and the response time of LWIR HOT HgCdTe photodiodes. Reverse bias highly (up to 50 times) increases responsivity that could reach 6 A/W at 300 K.

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Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes

Cited by 11 publications

References 20 publications

Non-Equilibrium Long-Wave Infrared HgCdTe Photodiodes: How the Exclusion and Extraction Junctions Work Separately

Non-Equilibrium Long-Wave Infrared HgCdTe Photodiodes: How the Exclusion and Extraction Junctions Work Separately

Defect Analysis in a Long-Wave Infrared HgCdTe Auger-Suppressed Photodiode

MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors

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