Design of an Auger-Suppressed Unipolar HgCdTe NBνN Photodetector

Itsuno, Anne M.; Phillips, Jamie; Velicu, S.

doi:10.1007/s11664-012-1992-y

Cited by 44 publications

(26 citation statements)

References 24 publications

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“…The HgCdTe nBn devices operating in MWIR range were presented by Itsuno et al [47][48][49] and Kopytko et al [50]. The HgCdTe ternary alloy is close to ideal infrared material system.…”

Section: Hgcdte Barrier Detectorsmentioning

confidence: 98%

Barrier infrared detectors

Martyniuk

Kopytko

Rogalski

2014

Opto-Electronics Review

105

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In 1959, Lawson and co-workers publication triggered development of variable band gap Hg1−xCdxTe (HgCdTe) alloys providing an unprecedented degree of freedom in infrared detector design. Over the five decades, this material system has successfully fought off major challenges from different material systems, but despite that it has more competitors today than ever before. It is interesting however, that none of these competitors can compete in terms of fundamental properties. They may promise to be more manufacturable, but never to provide higher performance or, with the exception of thermal detectors, to operate at higher temperatures.In the last two decades a several new concepts of photodetectors to improve their performance have been proposed including trapping detectors, barrier detectors, unipolar barrier photodiodes, and multistage detectors. This paper describes the present status of infrared barrier detectors. It is especially addressed to the group of III-V compounds including type-II superlattice materials, although HgCdTe barrier detectors are also included. It seems to be clear that certain of these solutions have merged as a real competitions of HgCdTe photodetectors.

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“…The HgCdTe nBn devices operating in MWIR range were presented by Itsuno et al [47][48][49] and Kopytko et al [50]. The HgCdTe ternary alloy is close to ideal infrared material system.…”

Section: Hgcdte Barrier Detectorsmentioning

confidence: 98%

Barrier infrared detectors

Martyniuk

Kopytko

Rogalski

2014

Opto-Electronics Review

105

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“…[1][2][3][4][5][6][7][8] Dark current caused by Shockley Hall Read (SHR) generation-recombination (G-R) processes associated with metal vacancies and dislocations is a very important issue. These SHR mechanisms are intensified by a trap-assisted tunneling (TAT) process.…”

Section: Introductionmentioning

confidence: 99%

“…A non-zero valence band offset in MCT-based barrier detector structures is the key item limiting their performance, [6][7][8][13][14][15] because holes generated by an optical absorption are not able to overcome the valence band energy barrier. Relatively high bias is required to be applied to collect photogenerated carriers.…”

Section: Introductionmentioning

confidence: 99%

The Numerical–Experimental Enhanced Analysis of HOT MCT Barrier Infrared Detectors

Jóźwikowski

Piotrowski

Jóźwikowska

et al. 2017

Journal of Elec Materi

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We present the results of numerical simulations and experimental data of band gap-engineered higher operating temperature mercury cadmium telluride barrier photodiodes working in a middle wavelength infrared radiation and a long wavelength infrared radiation range of an infrared radiation spectrum. Detailed numerical calculations of the detector performance were made with our own computer software taking into account Shockley Hall Read, Auger, band-to-band and trap-assisted tunneling and dislocation-related currents. We have also simulated a fluctuation phenomena by using our Langevin-like numerical method to analyze shot, diffusion, generation-recombination and 1/f noise.

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“…This, as well as technological problem with a weak Hg−Te bond, which results in interface instabilities, limits the capability to construct the HgCdTe−based nBn detectors, especially in the long wavelength infrared (LWIR) spectral range. The first HgCdTe nBn devices operating in mid−wa− velength infrared (MWIR) range were presented by Itsuno et al [10][11][12]. The planar nB n n (n−type barrier) structure with a 5.7 μm cut−off wavelength was grown by molecular beam epitaxy (MBE) on a bulk CdZnTe substrate.…”

Section: Introductionmentioning

confidence: 99%

Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors

Kopytko

Kębłowski

Gawron

et al. 2015

Opto-Electronics Review

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The performance of HgCdTe barrier detectors with cut-off wavelengths up to 3.6 μm fabricated using metaloorganic chemi- cal vapour deposition operated at high temperatures is presented. The detectors’ architecture consists of four layers: cap contact, wide bandgap barrier, absorber and bottom contact layer. The structures were fabricated both with n- and p-type absorbing layers. In the paper, different design of cap-barrier structural unit (n-BThe devices with a p-type cap contact exhibit very low dark current densities in the range of (2÷3)×10

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Design of an Auger-Suppressed Unipolar HgCdTe NBνN Photodetector

Cited by 44 publications

References 24 publications

Barrier infrared detectors

Barrier infrared detectors

The Numerical–Experimental Enhanced Analysis of HOT MCT Barrier Infrared Detectors

Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors

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