Resonant-cavity-enhanced Hg1−xCdxTe photoconductive detectors for midwave infrared wavelengths are investigated for use in multi- and hyper-spectral sensor systems. Resonant-cavity-enhanced performance is modeled, and compared with measured performance of fabricated devices. The responsivity of fabricated devices shows resonant cavity enhancement, with performance limited by surface recombination.
Erbium-doped materials have been investigated for generating and amplifying light in low-power chip-scale optical networks on silicon, but several effects limit their performance in dense microphotonic applications. Stoichiometric ionic crystals are a potential alternative that achieve an Er 3+ density 100× greater. We report the growth, processing, material characterization, and optical properties of single-crystal Er 2 O 3 epitaxially grown on silicon. A peak Er 3+ resonant absorption of 364 dB/cm at 1535 nm with minimal background loss places a high limit on potential gain. Using high-quality microdisk resonators, we conduct thorough C/L-band radiative efficiency and lifetime measurements and observe strong upconverted luminescence near 550 and 670 nm.
Nanoindentation has been used to investigate the elastoplastic behavior of Hg 0.7 Cd 0.3 Te prepared by molecular beam epitaxy. It was found that Hg 0.7 Cd 0.3 Te had a modulus of elasticity of ϳ50 GPa and hardness of ϳ0.66 GPa. The HgCdTe response to nanoindentation was found to be purely elastic for low loads and developed into ϳ10% elastic and ϳ90% plastic response for higher-load indentation exhibiting significant amounts of creep. The onset of plasticity has been observed to be marked by discontinuities or "pop-in" events in the indenter load-penetration curves at sheer stresses of ϳ1.8 GPa, and has been correlated with the homogeneous nucleation and propagation of dislocations.
A HgCdTe/CdTe system is investigated for use in distributed Bragg reflectors. The modeled performance is described and compared to an as-grown structure. As-grown 15-layer structures with arithmetically varying layer thickness are also annealed at 250°C and performance re-evaluated at 2 h, 7 h, and 24 h annealing times. There is some shifting of the absorption edge and some degradation in reflectivity, but the mirror is still functional.
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